Complementary Nanowire Neuron Device for Transistor Density
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Solution Overview
Problem
Conventional silicon integrated circuits face limitations in increasing transistor density and interconnection lines, necessitating innovative solutions for enhanced semiconductor device performance.
Innovation Solution
A complementary high-mobility nanowire neural device structure is developed, featuring a substrate with isolation regions, nanowires of different conductivity types, and a multi-layer film structure with specific electrode configurations to support carrier mobility and avoid short channel effects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional silicon integrated circuits are used to increase transistor density, then component density improves, but manufacturing limitations and performance degradation occur
Solution Approach 1:
The patent transitions from conventional planar silicon transistors to vertically-oriented nanowire structures, fundamentally changing the geometric parameters. This vertical configuration allows multiple transistors to be stacked within a smaller footprint area, dramatically increasing transistor density while maintaining manufacturability through established semiconductor processing techniques adapted for nanowire fabrication
Solution Approach 2:
The invention moves from two-dimensional planar transistor layouts to three-dimensional vertical nanowire structures. By utilizing the vertical dimension, multiple channel regions can be stacked above each other, enabling higher transistor density without increasing the lateral footprint, thus resolving the manufacturing limitations of conventional high-density integration
2Reliability
If nanowire structures are used to enhance carrier mobility, then device performance improves, but device complexity increases
Solution Approach 1:
The patent employs composite material structures consisting of nanowire cores surrounded by multiple functional layers including dielectric materials and conductive materials. This composite architecture enables enhanced carrier mobility through the nanowire material while the surrounding layers provide electrical isolation, gating control, and structural support, thereby improving device performance without excessive complexity
Solution Approach 2:
The device structure is segmented into distinct functional regions: the nanowire channel region, surrounded dielectric layers for isolation and gating, and conductive layers for electrical contacts. This segmentation allows each component to be optimized independently for its specific function, managing overall device complexity through modular design while achieving high performance
3Reliability
If multi-layer film structures with electrodes are implemented to control the channel, then short channel effects are reduced, but manufacturing precision requirements increase
Solution Approach 1:
The patent implements a nested multi-layer film structure where dielectric layers and conductive layers are concentrically arranged around the nanowire channel. This nested configuration provides effective electrostatic control of the channel from multiple directions, suppressing short channel effects. The self-aligned nature of the concentric structure reduces manufacturing precision requirements compared to planar multi-layer approaches
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The nanowire structure enhances carrier mobilities, improves device performance, and optimizes manufacturing processes, enabling more efficient control of the channel and reducing short channel effects.
Implementation Method 1
The nanowire structure enhances carrier mobilities
Implementation Method 2
forming a multi-layer film structure surrounding the nanowire structure. The multi-layer film structure includes a first dielectric layer, a conductive material layer, and a second dielectric layer
Data Source
AI summary
A method for forming a semiconductor device includes providing a substrate structure, which includes a nanowire structure supported by two isolation regions on a substrate. The nanowire structure includes a first nanowire and a second nanowire having different high mobility semiconductor materials and conductivity types. A multi-layer film structure is formed surrounding the nanowire structure and includes a conductive material layer sandwiched between two dielectric layers. A plurality of first electrodes are formed surrounding the multi-layer film structure surrounding a channel region of the first nanowire, and a plurality of second electrodes are formed surrounding the multi-layer film structure surrounding a channel region of the second nanowire. A third electrode is formed to contact one end of the nanowire structure, and a fourth electrode is formed to contact the other end of the nanowire structure. A fifth electrode is formed and coupled to a center portion of the nanowire structure.