Parametric Nanowire Measurement Models Using Reusable Sub-Structures
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Solution Overview
Problem
Existing metrology tools face challenges in accurately modeling nanowire-based semiconductor structures due to their complex three-dimensional geometry and diverse physical properties, leading to increased measurement time, error-prone model building, and difficulty in transferring models between users.
Innovation Solution
The development of reusable, parametric models specifically designed for nanowire-based semiconductor structures, which simplifies the model building process by using pre-defined geometric primitives and constraints, allowing users to create accurate measurement models with fewer errors and faster results.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If existing metrology tools are used to model nanowire-based semiconductor structures, then measurement capability is provided, but measurement time increases and accuracy decreases due to complex three-dimensional geometry
Solution Approach 1:
The patent segments the complex nanowire structure into reusable sub-structures (e.g., nanowire core, gate structures, insulator layers) that can be independently modeled and then assembled. This segmentation allows for more efficient computation by breaking down the complex three-dimensional geometry into manageable components, reducing measurement time while maintaining accuracy.
Solution Approach 2:
The patent implements preliminary action by pre-defining standardized sub-structure models with fixed geometric and material properties. These pre-characterized sub-structures can be directly reused across different nanowire device models without requiring full re-modeling, significantly reducing measurement preparation time while maintaining measurement accuracy.
2Measurement precision
If complex three-dimensional geometry is used to accurately represent nanowire structures, then model accuracy is improved, but model building becomes error-prone and difficult to transfer between users
Solution Approach 1:
The patent creates universal sub-structure models that can be applied across multiple nanowire device configurations. Each sub-structure (e.g., gate, nanowire, insulator) is defined with standardized parameters and geometric conventions that remain consistent across different devices, making models easier to build and transfer between users while maintaining accuracy for complex three-dimensional geometries.
Solution Approach 2:
The patent manages model complexity by controlling which parameters are allowed to change and which are fixed. Sub-structures have defined parameter hierarchies where geometric parameters are constrained to maintain physical realism, while only device-specific parameters vary between models. This parameter control reduces errors in model building while preserving the ability to represent complex three-dimensional geometries accurately.
3Adaptability or versatility
If measurements are performed over large ranges of machine parameters, then comprehensive characterization is achieved, but computation time and overall time to generate results increases significantly
Solution Approach 1:
The patent segments the parameter space by associating different machine parameters with specific sub-structures. Rather than varying all parameters across all structures simultaneously, the segmentation allows independent optimization of measurement parameters for each sub-structure type, reducing overall computation time while maintaining comprehensive characterization coverage.
Solution Approach 2:
The patent performs preliminary characterization of sub-structures with fixed parameters before full device modeling. By pre-computing optical responses and material properties for standardized sub-structures across relevant parameter ranges, the system reduces computation time for subsequent device-level measurements while maintaining comprehensive characterization capabilities.
Data Source
AI summary
Methods and systems for generating measurement models of nanowire based semiconductor structures based on re-useable, parametric models are presented herein. Metrology systems employing these models are configured to measure structural and material characteristics (e.g., material composition, dimensional characteristics of structures and films, etc.) associated with nanowire semiconductor fabrication processes. The re-useable, parametric models of nanowire based semiconductor structures enable measurement model generation that is substantially simpler, less error prone, and more accurate. As a result, time to useful measurement results is significantly reduced, particularly when modelling complex, nanowire based structures. The re-useable, parametric models of nanowire based semiconductor structures are useful for generating measurement models for both optical metrology and x-ray metrology, including soft x-ray metrology and hard x-ray metrology.