Nanowire Channel Structure with Phase Change Material for Current Density Modulation
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Solution Overview
Problem
Current semiconductor devices are designed for peak-demand conditions and consume excessive power during periods of lesser performance, as they cannot adjust drive current based on operational demands, which is particularly undesirable in power-sensitive devices like mobile devices.
Innovation Solution
The implementation of a multiple nanowire channel structure with a phase change material surrounding only one of the nanowires in the source/drain regions, allowing for current density modulation by changing the phase of the material from conductive to non-conductive using heat, thereby reducing power consumption when lower performance is acceptable.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a single-phase change material structure is used for current modulation, then power consumption is reduced during non-peak conditions, but device complexity increases due to additional materials and processing steps
Solution Approach 1:
The device divides the channel into multiple discrete nanowire segments (first nanowire and second nanowire) that can be independently controlled. The phase change material is selectively applied to only one nanowire, creating segmented functional regions that enable independent current modulation paths.
Solution Approach 2:
The device transitions from a static, fixed-current configuration to a dynamic, adjustable-current configuration by introducing phase change material that can switch between crystalline (conductive) and amorphous (non-conductive) states. This allows the device to dynamically adapt its drive current based on operational demands.
2Power
If multiple nanowires are used in parallel, then drive current capacity is increased for peak performance, but leakage current increases when device is turned OFF
Solution Approach 1:
Different nanowires within the same device are assigned different functional qualities - one nanowire receives phase change material coating while the other remains uncoated. This creates local quality differences that enable one nanowire to serve as a high-current path when needed, while the other provides a low-leakage path when the device is OFF.
Solution Approach 2:
The electrical conductivity parameter of the phase change material nanowire is changed by switching between crystalline and amorphous phases. When crystalline, it provides high conductivity for peak performance; when amorphous, it provides low conductivity to minimize leakage current.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables dynamic adjustment of drive current, reducing power consumption by approximately half during non-peak operational conditions while maintaining high performance when needed, thus extending battery life in mobile devices.
Implementation Method 1
allowing for current density modulation by changing the phase of the material from conductive to non-conductive using heat
Data Source
AI summary
A nanowire device is disclosed that includes first and second nanowires, a gate structure positioned around a portion of the first and second nanowires and a phase change material surrounding at least a portion of the first nanowire in the source/drain regions of the device but not surrounding the second nanowire in the source/drain regions.