Nanowire Optoelectronic Structure for Photon Extraction and LED Isolation
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Solution Overview
Problem
Existing radial-type optoelectronic devices with three-dimensional semiconductor elements suffer from low extraction efficiency due to photons being reflected back into the device, and complex processes for independent control of light-emitting diodes.
Innovation Solution
The design includes a conductive layer that does not cover the shells of the semiconductor elements, allowing photons to escape, and uses an electrically insulating support to facilitate independent control of light-emitting diodes without the need for trenches.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a conductive layer is used to diffuse current towards light-emitting diodes, then current diffusion is improved, but photons are reflected back into the device reducing extraction efficiency
Solution Approach 1:
The conductive layer is segmented into discrete contact regions positioned at the base of each nanowire rather than forming a continuous reflective layer. This segmentation allows current to be diffused to individual light-emitting diodes while eliminating the harmful reflective effect on photons that would occur with a continuous conductive layer.
2Adaptability or versatility
If electrical isolation trenches are formed to independently control light-emitting diodes, then independent control is achieved, but the manufacturing process becomes complex and integration is limited
Solution Approach 1:
The electrical isolation function is extracted from the substrate and implemented through insulating layers formed around each nanowire structure. This eliminates the need for complex trench formation in the substrate while maintaining independent control capability, thereby reducing manufacturing complexity and improving integration.
3Ease of operation
If a continuous conductive and reflective layer is used, then current diffusion to multiple light-emitting diodes is improved, but photons emitted by light-emitting diodes are reflected towards the inside of wires
Solution Approach 1:
Electrically insulating layers are introduced as intermediary structures between the conductive elements and the nanowire shells. These insulating layers allow the conductive layer to maintain its current-diffusing function while preventing photons from being reflected back into the wires, thus mediating between the conflicting requirements of current diffusion and photon extraction.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design increases the extraction efficiency of the optoelectronic device and simplifies the control of light-emitting diodes, enhancing both photon emission and manufacturing process efficiency.
Implementation Method 1
a layer 34 electrically conductive and reflective to the radiation emitted by the active layer, extending over the layer 32 between the wires 26 and forming the second electrode; The conductive layer 34 serves to diffuse the current towards all of the light-emitting diodes
Implementation Method 2
a layer 34 electrically conductive and reflective to the radiation emitted by the active layer, extending over the layer 32 between the wires 26 and forming the second electrode; The conductive layer 34 serves to diffuse the current towards all of the light-emitting diodes and to reflect the light rays emitted by the light-emitting diodes
Implementation Method 3
The active layer of the optoelectronic device is the region from which the majority of the electromagnetic radiation supplied by the optoelectronic device is emitted
Implementation Method 4
an encapsulation layer 36 electrically insulating and transparent to the radiation emitted by the active layer and covering the entire structure
Data Source
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AI summary
The invention relates to an optoelectronic device (40) comprising: a support (46); blocks (52) of a semiconductor material, resting on the support and each comprising a first face (54) on the side opposite the support and each comprising side walls (56); a nucleation layer (58) on each first face; a first insulating layer (60, 62) covering each nucleation layer and comprising an opening (64) exposing part of the nucleation layer; a semiconductor element (72) resting on each first insulating layer and in contact with the nucleation layer covered by the first insulating layer in the opening; a shell (74) covering each semiconductor element and comprising an active layer adapted to emit or absorb electromagnetic radiation; and a first conductive layer (80), reflecting the radiation, extending between the semiconductor elements and extending over at least one part of the side walls of the blocks.