Light-Emitting Device Nanowire Segmentation Insulating Adhesion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing light-emitting devices with nanowires suffer from level differences between basic light-emitting regions, leading to poor adhesion of insulating layers and potential leak currents due to the removal of nanowires between adjacent regions, causing electrical issues and manufacturing challenges.
Innovation Solution
A light-emitting device design featuring a substrate with first and second column portions, where the second column portions surround the first, an insulating layer covering both, and a wiring line electrically coupled to the first semiconductor layer, reducing level differences and enhancing adhesion, thereby minimizing leak currents and manufacturing complexities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If nanowires are removed between adjacent basic light-emitting regions, then individualization of light-emitting regions is achieved, but level differences are formed causing poor insulating layer adhesion and leak currents
Solution Approach 1:
The patent segments the nanowire array into two functional groups: light-emitting nanowires (first column portions) and non-light-emitting nanowires (second column portions). This segmentation allows the formation of insulating layers without creating level differences, as all nanowires remain at the same height while serving different functions. The non-light-emitting nanowires act as structural supports that maintain surface flatness for proper insulating layer adhesion.
Solution Approach 2:
The non-light-emitting nanowires (second column portions) serve as intermediary structural elements that maintain the surface topology. These nanowires do not emit light but provide the necessary physical support to prevent level differences, thereby mediating between the need for individualized light-emitting regions and the requirement for stable insulating layer adhesion.
2Reliability
If insulating layer is formed to prevent contact between wiring line and nanowires, then electrical isolation is achieved, but poor adhesion occurs due to level differences
Solution Approach 1:
By segmenting nanowires into light-emitting and non-light-emitting groups that both remain present on the surface, the patent eliminates level differences. This allows the insulating layer to be formed uniformly across the entire surface, achieving both strong adhesion and effective electrical isolation simultaneously.
Solution Approach 2:
The patent creates a homogeneous surface topology by maintaining all nanowires (both light-emitting and non-light-emitting) at the same height. This homogeneity ensures uniform insulating layer formation with consistent adhesion properties, while the different functional types of nanowires provide the necessary electrical isolation.
3Manufacturing precision
If individual etching of electrodes is performed, then precise electrode positioning is achieved, but manufacturing complexity increases
Solution Approach 1:
The patent merges the etching processes for first and second electrodes into a single batch process. The insulating layer pattern serves as a common mask for simultaneously etching both electrodes at their respective positions. This combining of operations maintains precise electrode positioning while significantly reducing manufacturing complexity and process steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves adhesion of the insulating layer, reduces the likelihood of leak currents, and simplifies manufacturing by allowing etching of the first and second electrodes in a batch process, enhancing the reliability and efficiency of the light-emitting device.
Implementation Method 1
the fourth semiconductor layer at each of the plurality of first column portions is injected with current to emit light
Implementation Method 2
semiconductor lasers to which nanocolumns are applied are expected to realize high-power light emission with a narrow radiation angle thanks to the photonic crystal effect of nanocolumns
Data Source
AI summary
A light-emitting device includes: a substrate; first column portions provided at the substrate; a plurality of second column portions provided at the substrate and that surround the first column portions as viewed from a normal direction of the substrate; a first semiconductor layer coupled to the first column portions; an insulating layer covering the first semiconductor layer and the second column portions; and a wiring line electrically coupled to the first semiconductor layer. Each of the first column portions and each of the second column portions includes an n-type second semiconductor layer, a p-type third semiconductor layer, and a u-type fourth semiconductor layer. The fourth semiconductor layer at each of the first column portions is injected with current to emit light. The fourth semiconductor layer at each of the second column portions is not injected with current. The wiring line overlaps at least one of the second column portions.