Nanowire Semiconductor Device Twin Gate Structure
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Solution Overview
Problem
The limitations of silicon-based semiconductor devices in further miniaturization and integration have led to the exploration of nanostructure-based electronic devices, with carbon nanotubes (CNTs) being considered for their improved performance and miniaturization capabilities, but existing methods face challenges in effectively utilizing their potential.
Innovation Solution
A semiconductor device structure incorporating a nanowire channel with a twin gate configuration, including a tunneling layer, charge storage layer with a nanostructure, and blocking layer, where the first and second gates are electrically separated, allowing for ambipolar operation and enabling the device to function as either a memory device or diode, with a manufacturing method involving the formation of insulating and hydrophobic layers, and the use of specific materials like aminopropyl-triethoxysilane and octadecyl-trichlorosilane for adsorption films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If silicon-based semiconductor devices are continuously miniaturized to increase integration, then device integration is improved, but manufacturing limitations and characteristic limitations worsen
Solution Approach 1:
The patent changes the material parameter from silicon-based to carbon nanotube-based channels, fundamentally altering the physical and electrical characteristics to overcome silicon's manufacturing and performance limitations while enabling continued miniaturization
Solution Approach 2:
The device employs a composite structure combining carbon nanotube channels with silicon-based gate structures and insulating layers, integrating the advantages of both material systems to achieve high performance and manufacturability
2Productivity
If carbon nanotubes are used to manufacture highly integrated electronic devices, then device performance and miniaturization are improved, but device functionality control worsens
Solution Approach 1:
The gate structure is segmented into two independent gates (first gate and second gate) that can be controlled separately, enabling independent adjustment of device characteristics to achieve both memory and diode functions from the same physical structure
Solution Approach 2:
The device characteristics are made dynamic and adjustable through independent gate voltage control, allowing the same physical device to switch between different operational modes (memory or diode) based on applied voltages
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves enhanced integration and performance by allowing independent control of gate voltages, enabling selective operation as a memory device or diode, and demonstrating ambipolar characteristics, thus overcoming the limitations of silicon-based devices.
Implementation Method 1
forming a hydrophobic layer with an opening on the insulating layer; forming a channel including a nanowire in the opening
Implementation Method 2
The forming of the charge storage layer may include forming an adsorption film on the tunneling layer; and attaching the nanostructure on the adsorption film. The adsorption film may be a hydrophilic adsorption film or a hydrophobic adsorption film.
Data Source
AI summary
A semiconductor device according to example embodiments may include a channel including a nanowire and a charge storage layer including nanoparticles. A twin gate structure including a first gate and a second gate may be formed on the charge storage layer. The semiconductor device may be a memory device or a diode.