Narrow-Pulse-Width Laser via Integrated Substrate
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Solution Overview
Problem
Existing pulse lasers have wide pulse widths, leading to low point cloud density, poor ranging accuracy, and short limit ranging distance in laser sensors like LiDARs.
Innovation Solution
A narrow-pulse-width pulse laser design featuring a circuit substrate with a field effect transistor, capacitors, and a laser chip, where capacitors are arranged between the field effect transistor and the laser chip to reduce loop inductance, resulting in a faster discharge and narrower pulse width.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a conventional pulse laser is used, then the device structure is simple, but the pulse width is wide leading to low point cloud density and poor ranging accuracy
Solution Approach 1:
The patent merges the field effect transistor, capacitors, and laser chip into a single integrated pulse laser device structure. The circuit substrate integrates the switching element (field effect transistor) and energy storage element (capacitor) in close proximity to the laser chip, forming a unified structure that reduces loop inductance and achieves narrow pulse width while maintaining structural simplicity
Solution Approach 2:
The patent introduces a specifically designed circuit substrate as an intermediary component between the power source and laser chip. This substrate integrates the field effect transistor and capacitors with optimized layout (capacitors arranged between the field effect transistor and laser chip), serving as a mediator that reduces loop inductance and enables narrow pulse width operation
2Reliability
If a conventional pulse laser with wide pulse width is used, then the device is easier to manufacture, but the point cloud density is low and measurement repeatability is poor
Solution Approach 1:
The patent applies local quality optimization by specifically arranging the capacitors in the gap between the field effect transistor and laser chip, rather than using a conventional layout. This localized optimization of the circuit layout reduces loop inductance at the critical discharge path, improving pulse width and measurement repeatability while maintaining standard manufacturing processes
3Length of stationary object
If a conventional pulse laser is used, then the structure is simpler, but the limit ranging distance is short
Solution Approach 1:
The patent merges the switching element (field effect transistor) and energy storage element (capacitor) into close integration with the laser chip on a single circuit substrate. This merging reduces the loop inductance of the discharge circuit, enabling faster current rise time and higher peak power, which extends the limit ranging distance despite increased structural integration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design improves point cloud density, ranging accuracy, and limit ranging distance by reducing loop inductance and pulse width, enhancing the performance of laser sensors.
Implementation Method 1
one or more capacitors, wherein the one or more capacitors are arranged between the field effect transistor and the laser chip along an extension direction of a gap between the field effect transistor and the laser chip
Implementation Method 2
a field effect transistor, wherein the field effect transistor, the capacitor and the laser chip are all electrically connected to the circuit substrate
Implementation Method 3
a laser chip, wherein the field effect transistor, the capacitor and the laser chip are all electrically connected to the circuit substrate
Data Source
AI summary
The present disclosure provides a narrow-pulse-width pulse laser, including a circuit substrate, a laser chip, one or more capacitors, and a field effect transistor. Each of the field effect transistor, the capacitor, and the laser chip is electrically connected to the circuit substrate. The capacitors are arranged between the field effect transistor and the laser chip along an extension direction of a gap between the field effect transistor and the laser chip. The circuit substrate may include a first conductor layer; a second conductor layer; and an insulating layer arranged between the first conductor layer and the second conductor layer, wherein the first conductor layer and the second conductor layer are electrically connected through a via hole in the insulating layer.