Narrow Slot Contact Patterning Without Complex Spacer Steps
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Solution Overview
Problem
Existing spacer technology for creating narrow slot contacts is complex and costly, involving over-coating, chemical mechanical planarization, and reactive ion etch, which can reduce throughput and is not efficient for advanced lithographic capabilities.
Innovation Solution
A 'freeze-less' anti-spacer method that uses a reversal material and a fill material sensitive to a solubility-changing agent, allowing for the formation of narrow slot contacts through controlled diffusion of a reactive species, without the need for a 'freeze' step, to achieve precise pattern resolutions below the limits of conventional lithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If spacer technology is used to define sub-resolution line features via ALD, then patterning resolution is improved, but process complexity increases and throughput decreases
Solution Approach 1:
The patent extracts and removes the complex spacer formation steps (ALD over-coating, CMP, RIE) from the process flow. Instead, it uses a simplified anti-spacer approach where a single layer is deposited and patterned directly, eliminating multiple processing steps while maintaining sub-resolution patterning capability
Solution Approach 2:
The patent inverts the conventional spacer approach by using an 'anti-spacer' methodology. Rather than building up structures to define features, it uses a single deposited layer that is selectively removed or modified to create the desired pattern, reversing the traditional build-up approach and reducing process complexity
2Manufacturing precision
If conventional spacer techniques are used, then narrow trench formation is achieved, but manufacturing cost increases
Solution Approach 1:
The patent employs a disposable single-layer anti-spacer structure that is deposited, patterned, and then selectively removed. This temporary layer defines the narrow trench pattern without requiring expensive, complex spacer materials and processing equipment, achieving cost-effective sub-resolution patterning
Solution Approach 2:
The patent changes the material parameters and deposition parameters of the anti-spacer layer to optimize its removal characteristics. By controlling deposition thickness, material composition, and subsequent processing parameters, narrow trenches are formed with precise dimensional control at lower cost
3Manufacturing precision
If a 'freeze' step is used in anti-spacer processing, then solubility shifting is controlled, but throughput is reduced
Solution Approach 1:
The patent extracts and eliminates the time-consuming 'freeze' step from the anti-spacer processing flow. Instead of using thermal or chemical freezing to control solubility, it employs alternative mechanisms such as selective etching or material property differences that achieve the same solubility control without the additional processing step, thereby maintaining throughput
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of narrow slot contacts with precise control over critical dimensions, improving etch performance and reducing pattern collapse, while maintaining high throughput and reducing costs.
Implementation Method 1
Selected portions of the second relief pattern can be exposed to a first actinic radiation that causes a portion of the photo-acid generator within the selected portions of the second relief pattern to generate the photo-acid in the selected portions of the second relief pattern
Implementation Method 2
The photo-acid generated in the selected portion of the second relief pattern can be further driven from the selected portions of the second relief pattern into portions of the fill material through interfaces between the selected portions of the second relief pattern and the fill material
Data Source
AI summary
In method of patterning a substrate, a first relief pattern is formed based on a first layer deposited over a substrate. Openings in the first relief pattern are filled with a reversal material. The first relief pattern is then removed from the substrate and the reversal material remains on the substrate to define a second relief pattern. A fill material is deposited over the substrate that is in contact with the second relief pattern, and sensitive to a photo-acid generated from a photo-acid generator in the second relief pattern. Selected portions of the second relief pattern are exposed to a first actinic radiation to generate the photo-acid in the selected portions of the second relief pattern. The photo-acid are driven from the selected portions of the second relief pattern into portions of the fill material so that the portions of the fill material to become soluble to a predetermined developer.