Narrow Sputtering Sources for Semiconductor Fabrication

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Solution Overview

Problem

Existing sputtering systems for fabricating semiconductor ICs, solar cells, and flat panel displays face challenges with large, complex, and expensive sputtering sources and targets, leading to underutilization and high maintenance costs due to difficulties in uniform sputtering and target replacement.

Innovation Solution

A sputtering system utilizing multiple narrow sputtering sources and targets, where each source is configured with a folded metal housing and an elongated target that can be easily replaced, allowing for efficient and cost-effective processing of substrates with improved target utilization and reduced downtime.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If a large sputtering source and target are used to process large substrates or batch processing, then the processing capacity is improved, but the device complexity and manufacturing cost increase significantly

Engineering Contradiction:
Improveprocessing capacityVSAvoidsource complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent divides a large sputtering source into multiple smaller modular sources arranged in an array. Each module has its own magnetron and target section, allowing the system to achieve large substrate coverage through parallel processing while maintaining simple, manageable individual components. This segmentation resolves the contradiction by enabling high productivity through multiple units rather than one complex large unit.

Inventive Principle:
Principle #1Segmentation

2Area of stationary object

If a large sputtering target is used, then the processing area is increased, but the target utilization decreases due to difficulties in uniform sputtering

Engineering Contradiction:
Improvetarget areaVSAvoidtarget utilization
Core Design Contradiction:
Area of stationary objectVSLoss of substance

Solution Approach 1:

The large target area is divided into multiple smaller target sections, each associated with a separate magnetron. This allows independent optimization of sputtering conditions for each section, ensuring uniform material deposition across the entire target area. Each small target section can be fully utilized without the uniformity problems that plague large single targets.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent implements a scanning mechanism that moves the magnetron assembly across the target surface during operation. This dynamic approach allows each small target section to be sequentially activated, ensuring uniform consumption of target material and maximizing target utilization. The scanning motion distributes the sputtering load evenly across all target sections.

Inventive Principle:
Principle #15Dynamics

3Productivity

If a large sputtering source is used, then the processing capability is enhanced, but the maintenance difficulty and cost increase

Engineering Contradiction:
Improveprocessing capabilityVSAvoidmaintenance difficulty
Core Design Contradiction:
ProductivityVSEase of repair

Solution Approach 1:

The sputtering system is divided into independent modular units, each with its own magnetron, power supply, and target section. This modular architecture allows individual modules to be maintained or replaced without affecting the entire system. Maintenance personnel can service one module at a time while others continue operating, significantly reducing maintenance difficulty and system downtime.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The modular design enables quick changeout of target sections and magnetron assemblies without requiring complex disassembly procedures. Standardized interfaces and mounting mechanisms allow routine maintenance tasks to be performed rapidly, reducing the need for specialized service interventions and lowering overall maintenance costs.

Inventive Principle:
Principle #25Self-service

4Device complexity

If a narrow sputtering source is used, then the source complexity is reduced, but the processing area coverage decreases

Engineering Contradiction:
Improvesource complexityVSAvoidprocessing area
Core Design Contradiction:
Device complexityVSArea of stationary object

Solution Approach 1:

Multiple simple narrow sputtering sources are arranged in a parallel array configuration. While each individual source has a narrow processing area, the combined output of all sources covers the entire required substrate area. This merging of multiple simple units achieves the coverage of a single large complex source while maintaining the simplicity and low cost of narrow sources.

Inventive Principle:
Principle #5Merging (Combining)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The system enables efficient and cost-effective processing of multiple substrates simultaneously with easy target replacement, reducing the complexity and cost of sputtering sources and targets, and improving overall system utilization and maintenance.

Implementation Method 1

The target is cooled by a heat sink that is urged against the backside of the target by a pneumatic pressure

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

The target is cooled by a heat sink that is urged against the backside of the target by a pneumatic pressure. The pressing of the heat sink against the target also fixes the target in place

Methodology Applied
Scientific EffectPneumatic pressure: Pressurisation

Implementation Method 3

This application relates to systems for physical vapor deposition processing, such as sputtering systems used in the fabrication of solar cells, flat panel displays, touch screens, etc.

Methodology Applied
Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Data Source

PatentUS9892890B2Narrow source for physical vapor deposition processing
Publication Date: 2018.02.13 INTEVAC INC
  • US9892890B2 patent drawing
  • US9892890B2 patent drawing
  • US9892890B2 patent drawing

AI summary

A narrow sputtering source and target which are designed to be installed in a series on a sputtering chamber. Each of the narrow sputtering source has length sufficient to traverse one direction of the sputtering zone, but is much narrower than the orthogonal direction of the sputtering zone. When the sputtering chamber performs a pass-by sputtering process, each of the narrow sputtering sources is sufficiently long to traverse the sputtering zone in the direction orthogonal to the substrate travel direction, but is much narrower than the sputtering zone in the direction of substrate travel. Several narrow sputtering sources are installed so as to traverse the entire sputtering zone in all directions.