Native Device Integration Without Halo Implant
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Solution Overview
Problem
Conventional manufacturing processes for native semiconductor devices face challenges in integrating devices with and without halo implants, particularly at short channel lengths, as halo implants can cause threshold voltage roll-up, increasing manufacturing costs and time.
Innovation Solution
An integrated native device is fabricated without a halo implanted channel region by forming perpendicular native and non-native gate arrangements, using a shared implantation step to create source/drain regions and halo regions in non-native devices while blocking halo implants from the native device channel region.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If halo implants are formed in the channel region of native devices, then short channel effects are reduced, but threshold voltage roll-up occurs and manufacturing complexity increases
Solution Approach 1:
The patent segments the device structure by forming separate native device regions and non-native device regions with distinct gate arrangements. The native devices have gates oriented in a first direction without halo implants, while non-native devices have gates oriented in a second direction with halo implants. This spatial segmentation allows each device type to have optimized characteristics without interfering with the other.
Solution Approach 2:
The patent applies local quality by providing halo implants only in specific regions where non-native devices are formed, while deliberately excluding halo implants from the channel regions of native devices. The implantation process is localized to affect only the intended device types, giving each region the specific properties it needs.
2Manufacturing precision
If additional process steps are added to prevent halo implants in native devices, then threshold voltage stability is improved, but manufacturing time and cost increase
Solution Approach 1:
The patent merges the fabrication processes for native and non-native devices into a single integrated process flow. Both device types are formed simultaneously in the same semiconductor substrate using shared process steps, including a common implantation step that forms both source/drain regions and halo regions. The perpendicular gate arrangements enable this merging without requiring separate processing lines or additional masking steps.
Solution Approach 2:
The patent creates a universal manufacturing process that can produce both native and non-native devices using the same equipment and process parameters. The implantation step serves multiple functions: forming source/drain regions in both device types and creating halo regions in non-native devices, all in a single operation. This multi-functionality eliminates the need for device-specific process variations.
3Area of moving object
If channel lengths are reduced to increase device density, then integration density is improved, but threshold voltage roll-up worsens in native devices with halo implants
Solution Approach 1:
The patent segments the device regions to allow native devices and non-native devices to have different structural configurations. Native devices with shorter channel lengths are formed without halo implants, preventing threshold voltage roll-up, while non-native devices can utilize halo implants if needed. This segmentation enables aggressive scaling of native devices without the adverse effects that would otherwise limit short channel performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the integration of native and non-native devices with desirable performance characteristics, maintaining a threshold voltage near zero volts and reducing short channel effects, while avoiding additional process steps and cost increases.
Implementation Method 1
halo implants in a channel region of the device
Data Source
AI summary
According to one embodiment, a semiconductor structure including an integrated native device without a halo implanted channel region comprises an arrangement of semiconductor devices formed over a common substrate, the arrangement includes native devices disposed substantially perpendicular to non-native devices, wherein each of the native and non-native devices includes a respective channel region. The arrangement is configured to prevent formation of halo implants in the native device channel regions during halo implantation of the non-native device channel regions. In one embodiment, the disclosed native devices comprise native transistors capable of avoiding threshold voltage roll-up for channel lengths less than approximately 0.5 um.