Native-Transistor Level Shifter With Leakage Prevention

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Solution Overview

Problem

As process parameters shrink, maintaining the proper operation of level shifters that convert low power voltage signals to high power voltage signals becomes difficult due to the non-proportional decrease in power voltage and the constant threshold voltage of high-voltage transistors.

Innovation Solution

A level shifter design incorporating a driving circuit, a level shifting circuit, and a leakage prevention circuit, where the driving circuit includes native transistors with low threshold voltages to facilitate operation at low voltages, and the level shifting circuit applies a third voltage to the output terminal, preventing leakage current.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If high-voltage transistors are used for level shifting, then voltage conversion capability is improved, but threshold voltage remains constant and does not scale with process shrinkage

Engineering Contradiction:
Improvevoltage conversion capabilityVSAvoidoperation reliability at scaled voltages
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The patent changes the threshold voltage parameter of transistors by using native transistors instead of conventional high-voltage transistors. Native transistors have threshold voltages that scale proportionally with power voltage, allowing the level shifter to maintain proper operation as process parameters shrink and voltages decrease.

Inventive Principle:
Principle #35Parameter changes

2Use of energy by moving object

If process parameters are shrunk to reduce power consumption, then energy efficiency is improved, but the non-proportional decrease in power voltage versus threshold voltage causes operation difficulty

Engineering Contradiction:
Improvepower consumptionVSAvoidlevel shifter operation
Core Design Contradiction:
Use of energy by moving objectVSEase of operation

Solution Approach 1:

The patent modifies the transistor threshold voltage parameter to match the scaled power voltage. By using native transistors whose threshold voltages decrease proportionally with power voltage during process shrinkage, the level shifter maintains ease of operation while benefiting from reduced power consumption.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The native transistors in the driving circuit serve multiple functions: they provide proper voltage level detection, drive the level shifting circuit, and maintain operational reliability across different process nodes. This multi-functionality allows the level shifter to operate efficiently at scaled voltages without requiring separate optimization for each function.

Inventive Principle:
Principle #6Universality (Multi-functionality)

3Ease of operation

If native transistors are used in the driving circuit, then operation at low voltages is improved, but leakage current becomes a concern

Engineering Contradiction:
Improvelow voltage operationVSAvoidleakage current
Core Design Contradiction:
Ease of operationVSObject-generated harmful factors

Solution Approach 1:

The patent introduces a leakage prevention circuit as an intermediary component that works together with the native transistor-based driving circuit. This intermediary circuit eliminates the harmful leakage current effect while preserving the low voltage operation capability provided by the native transistors.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS10483962B2Level shifter
Publication Date: 2019.11.19 SAMSUNG ELECTRONICS CO LTD
  • US10483962B2 patent drawing
  • US10483962B2 patent drawing
  • US10483962B2 patent drawing

AI summary

A level shifter includes a driving circuit, which receives an input signal and outputs a driving signal in response to a first voltage level of the input signal; a level shifting circuit, which outputs an output signal of a second voltage level in response to the driving signal; and a leakage prevention circuit, which prevents a leakage current of the driving circuit, wherein the driving circuit may include at least one native transistor.