Nb and V ALD Precursors for Low-Melting Dielectric Film Deposition
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Solution Overview
Problem
There is a need for liquid or low melting point, highly thermally stable precursors suitable for vapor phase film deposition of Niobium and Vanadium containing films with controlled thickness and composition at high temperatures, as existing precursors like NbCl5 have high melting points and require reducing agents, making them difficult to use in vapor deposition processes.
Innovation Solution
Development of precursors with formulas such as M(=NtBu)Cp(L)2 and M(=NtBu)(L)2, where M=V or Nb, L=various cyclopentadienes, and R1-R3=alkyl groups, which are liquid at room temperature or below 50°C, thermally stable, and suitable for ALD processes, allowing deposition of Nb and V containing films with controlled thickness using oxidizing or nitriding agents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If NbCl5 is used as a niobium source for vapor deposition, then films can be deposited, but the high melting point of NbCl5 makes the precursor difficult to use and requires Zn as a reducing agent
Solution Approach 1:
The patent changes the chemical parameters of the precursor by replacing NbCl5 with organometallic compounds containing Nb-C bonds and labile ligands. This fundamental parameter change transforms the precursor from a high-melting inorganic chloride to a low-melting organic compound suitable for vapor deposition without reducing agents.
Solution Approach 2:
The patent employs precursors with labile (easily removable) ligands that act as temporary, disposable components. These ligands facilitate vapor deposition but are removed during the process, leaving the desired NbNx film. The labile ligands serve their purpose and are discarded, similar to short-living objects.
2Productivity
If V(NMe2)4 is used as a vanadium source for CVD, then VNx films can be deposited, but the process requires specific conditions and plasma enhancement for ALD
Solution Approach 1:
The patent develops precursors that enable self-limited surface reactions without requiring plasma enhancement. The precursors are designed to react autonomously with co-reactants like NH3 or amines, making the process self-service and eliminating the need for complex plasma generation equipment and control systems.
Solution Approach 2:
The patent modifies the molecular structure of vanadium precursors to achieve optimal volatility and reactivity parameters. By adjusting ligand types and metal-ligand bond strengths, the precursors achieve the right balance for low-temperature ALD processes without plasma, simplifying the overall process parameters.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
These precursors enable efficient and stable vapor deposition of Nb and V films without particle generation, offering a wide self-limited ALD window and compatibility with group IV and V elements for energy storage applications.
Implementation Method 1
method of forming a Nb or Vanadium-containing film on one or more substrates via vapor deposition processes
Implementation Method 2
These precursors enable efficient and stable vapor deposition of Nb and V films
Implementation Method 3
thermally stable, and suitable for ALD processes, allowing deposition of Nb and V containing films with controlled thickness
Implementation Method 4
allowing deposition of Nb and V containing films with controlled thickness using oxidizing or nitriding agents
Implementation Method 5
allowing deposition of Nb and V containing films with controlled thickness using oxidizing or nitriding agents
Data Source
AI summary
A Metal-containing film forming composition comprising a precursor having the formulawherein, M=V or Nb or Ta; R1-R3=independently H or C1-C10 alkyl group; L=Substituted or unsubstituted cyclopentadienes, cyclohexadienes, cycloheptadienes, cyclooctadienes, fluorenes, indenes, fused ring systems, propene, butadiene, pentadienes, hexadienes, heptadienes; m=0 or 1.