NbN Sputter Deposition With Chamber Preconditioning and Shared Vacuum

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Solution Overview

Problem

Depositing high-quality niobium nitride (NbN) with a high critical temperature is challenging due to the need for high vacuum, high mobility species, and specific deposition conditions, and existing methods often result in contamination or oxidation when switching between deposition tools, affecting the critical temperature and device performance.

Innovation Solution

A physical vapor deposition method involving preconditioning the chamber with nitrogen and inert gases at different flow ratios, followed by depositing a niobium nitride layer on a workpiece using a cluster tool with multiple chambers or a single chamber configuration, allowing for the deposition of buffer and capping layers without removing the workpiece from the vacuum environment, thereby stabilizing the critical temperature and preventing contamination.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If existing methods are used to deposit niobium nitride, then deposition can be achieved, but contamination or oxidation occurs when switching between deposition tools, affecting critical temperature and device performance

Engineering Contradiction:
Improvecritical temperature stabilityVSAvoidcontamination and oxidation
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent combines multiple deposition chambers (buffer layer chamber, niobium nitride chamber, capping layer chamber) into a single integrated system with shared vacuum environment. This allows continuous deposition of different layers without breaking vacuum or transferring workpieces between separate tools, thereby preventing contamination and oxidation while maintaining stable critical temperature

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent maintains a continuous vacuum environment throughout the deposition process and uses inert gases (nitrogen and argon) to create an oxygen-free atmosphere. This prevents oxidation of the niobium nitride layer and other sensitive materials during deposition, ensuring material purity and stable superconducting properties

Inventive Principle:
Principle #39Inert atmosphere (Inert environment)

2Manufacturing precision

If high vacuum conditions are maintained for high-quality NbN deposition, then material quality improves, but process complexity and equipment requirements increase

Engineering Contradiction:
Improvedeposition qualityVSAvoidvacuum system complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent merges multiple deposition chambers into a single vacuum system, so only one vacuum pump and vacuum control system is needed. This reduces overall system complexity compared to having separate vacuum systems for each deposition tool, while still maintaining the high vacuum conditions required for high-quality NbN deposition

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent maintains continuous vacuum conditions throughout the entire multi-layer deposition process without breaking vacuum. This continuous operation simplifies vacuum system requirements compared to repeated vacuum pumping and venting cycles, while ensuring high deposition quality through consistent vacuum conditions

Inventive Principle:
Principle #20Continuity of useful action

3Manufacturing precision

If multiple deposition tools are used for buffer layer, NbN layer, and capping layer, then layer quality can be optimized, but workpiece transfer causes contamination and oxidation

Engineering Contradiction:
Improvelayer qualityVSAvoidcontamination during transfer
Core Design Contradiction:
Manufacturing precisionVSObject-affected harmful factors

Solution Approach 1:

The patent combines three separate deposition functions (buffer layer, NbN layer, capping layer) into a single multi-chamber system where all chambers share a common vacuum environment. This allows workpieces to be processed sequentially in different chambers without being transferred to external tools, eliminating contamination risks during transfer while maintaining optimized deposition conditions for each layer

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent uses a shared vacuum environment as an intermediary medium that connects multiple deposition chambers. This vacuum intermediary allows workpieces to move between chambers (via transfer ports or shutters) without exposure to atmospheric contamination, enabling high-quality layer deposition while preventing oxidation during transitions

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables reliable deposition of high-quality NbN with a high critical temperature, improving the performance of devices like SNSPDs by maintaining high quantum efficiency, reducing dark current, and enhancing process stability and manufacturability.

Implementation Method 1

performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber

Methodology Applied
Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Implementation Method 2

a sputtering operation can be performed using a niobium target in the presence of nitrogen gas. The sputtering can be performed by inducing a plasma in the reactor chamber

Methodology Applied
Scientific EffectSputtering: Sputtering

Implementation Method 3

igniting a plasma in the chamber before placing the workpiece in a chamber that includes a metal target

Methodology Applied
Scientific EffectPlasma: Plasma

Data Source

PatentUS20240003000A1Method and Apparatus for Deposition of Mental Nitrides
Publication Date: 2024.01.04 APPLIED MATERIALS INC
  • US20240003000A1 patent drawing
  • US20240003000A1 patent drawing
  • US20240003000A1 patent drawing

AI summary

A structure including a metal nitride layer is formed on a workpiece by pre-conditioning a chamber that includes a metal target by flowing nitrogen gas and an inert gas at a first flow rate ratio into the chamber and igniting a plasma in the chamber before placing the workpiece in the chamber, evacuating the chamber after the preconditioning, placing the workpiece on a workpiece support in the chamber after the preconditioning, and performing physical vapor deposition of a metal nitride layer on the workpiece in the chamber by flowing nitrogen gas and the inert gas at a second flow rate ratio into the chamber and igniting a plasma in the chamber. The second flow rate ratio is less than the first flow rate ratio.