Near-Field Mask Modeling Using Diffraction Interference Correction
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Solution Overview
Problem
Existing mask manufacturing methods face challenges in accurately generating near-fields due to overfitting and inefficiencies in simulating the complex interactions between light and mask structures, leading to potential errors in pattern transfer during photolithography processes.
Innovation Solution
An optimal near-field generation method using mutual interference complex diffraction patterns, combined with a 3D mask effect reflection and corrected using artificial neural networks or Volterra series, to minimize differences between simulated and rigorous near-fields, ensuring precise pattern formation on semiconductor substrates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional simulation methods are used to generate near-fields, then manufacturing process is simpler, but manufacturing precision deteriorates due to overfitting and inability to accurately simulate complex light-mask interactions
Solution Approach 1:
The patent introduces a mask 3D effect reflection layer as an intermediary between the mutual interference complex diffraction pattern and the rigorous near-field. This reflection layer captures the complex light-mask interactions without requiring full rigorous simulation, thereby improving near-field generation accuracy while avoiding the computational complexity of complete rigorous simulations.
Solution Approach 2:
The patent transforms the near-field generation problem by changing parameters from direct rigorous simulation to a corrected approach using mask 3D effect reflection. This parameter transformation allows the system to achieve high accuracy by adjusting and correcting key optical parameters rather than performing computationally intensive full-wave simulations.
2Manufacturing precision
If rigorous near-field simulation is performed to ensure accuracy, then manufacturing precision improves, but productivity deteriorates due to computational time requirements
Solution Approach 1:
The patent performs preliminary calculation of the mutual interference complex diffraction pattern and mask 3D effect reflection before final near-field generation. By pre-computing these intermediate components, the system reduces the computational burden during actual near-field generation, thereby improving productivity while maintaining manufacturing precision through the use of pre-characterized optical effects.
Solution Approach 2:
The patent segments the near-field generation process into distinct components: mutual interference complex diffraction pattern calculation, mask 3D effect reflection, and final near-field synthesis. This segmentation allows each component to be optimized independently, with the diffraction pattern and 3D effects computed separately and then combined, significantly reducing overall computational time while maintaining accuracy.
3Manufacturing precision
If complex simulation models are used to capture all light-mask interactions, then manufacturing precision improves, but device complexity increases leading to overfitting
Solution Approach 1:
The patent extracts only the essential optical interaction effects (mutual interference diffraction and mask 3D effect reflection) from the complete set of possible light-mask interactions. By taking out and separately characterizing these dominant effects, the model achieves high accuracy for the specific photolithography process while avoiding overfitting to unnecessary complex interactions that would reduce generalization capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces errors in pattern transfer by optimizing near-field generation, enhancing the accuracy and efficiency of mask manufacturing processes, thereby improving semiconductor production quality.
Implementation Method 1
a mutual interference complex diffraction pattern of a design layout for a target pattern is obtained
Implementation Method 2
the mutual interference complex diffraction pattern representing a pattern formed by mutual interference between a plurality of spherical waves
Data Source
AI summary
Provided are an optimal near-field generation method and a mask manufacturing method comprising the optimal near-field generation method. The optimal near-field generation method may include obtaining a mutual interference complex diffraction pattern formed by mutual interference between a plurality of spherical waves formed as a certain plane wave incident on each of a plurality of edge segments differentiated from an edge of a design layout is scattered on each of the plurality of edge segments, obtaining a complex near-field by applying a Kirchhoff boundary condition to the mutual interference complex diffraction pattern, and obtaining an optimal near-field by optimizing the complex near-field so as to reduce a difference between the complex near-field and a rigorous near-field of the design layout.