Negative Capacitance Blocking Oxide Layer for Non-Volatile Memory
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Solution Overview
Problem
Conventional non-volatile memory technologies suffer from slow operating speed, high operating voltage, and degraded durability due to frequent electron movement through tunneling oxide layers during program, read, and erase operations.
Innovation Solution
A non-volatile memory design incorporating a negative capacitance blocking oxide layer, composed of a dielectric layer and an imprinted polarization layer, which induces a depolarization field and internal field to enhance operating voltage and speed without compromising durability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a single-layered high-k insulating film is used as a blocking oxide layer, then operating voltage is reduced, but durability is degraded due to increased leakage current
Solution Approach 1:
The patent uses a composite blocking oxide layer structure consisting of a high-k insulating film layer and a ferroelectric layer. The high-k insulating film (such as HfO2) provides low operating voltage characteristics, while the ferroelectric layer (such as Pb(Zr,Ti)O3 or Pb1-xLaxZr1-yTiyO3) provides high durability by blocking electron tunneling. This composite structure resolves the contradiction between low operating voltage and high durability.
Solution Approach 2:
The blocking oxide layer is segmented into multiple functional layers: a first blocking oxide layer (high-k insulating film) for voltage control and a second blocking oxide layer (ferroelectric layer) for durability enhancement. This segmentation allows each layer to perform its specific function optimally, with the high-k layer reducing operating voltage and the ferroelectric layer preventing electron leakage.
2Reliability
If conventional non-volatile memory operations are performed, then data storage is achieved, but operating speed is slow due to frequent electron movement through tunneling oxide layer
Solution Approach 1:
The ferroelectric layer is pre-polarized to create an internal electric field that opposes electron tunneling into the charge storage layer. This preliminary action prevents unnecessary electron movement during read operations, thereby improving operating speed while maintaining data storage capability. The pre-polarized state acts as a barrier that reduces electron injection frequency.
3Speed
If the blocking oxide layer structure is optimized for speed, then operating voltage is reduced, but durability is compromised
Solution Approach 1:
Different regions of the blocking oxide layer structure are assigned different local qualities: the high-k insulating film region provides low operating voltage and fast switching characteristics, while the ferroelectric layer region provides high durability through electron blocking. This local differentiation of functional properties allows the system to achieve both speed and durability simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution improves operating voltage and speed while maintaining durability by amplifying the electric field applied to the tunneling oxide layer through the negative capacitance blocking oxide layer's enhanced capacitance.
Implementation Method 1
the imprinted polarization layer may have a negative capacitance by a depolarization field induced as an initially aligned polarization is switched in response to a positive voltage being applied to the gate
Implementation Method 2
the depolarization field being in a direction opposite to that of an electric field of the switched polarization
Implementation Method 3
the negative capacitance blocking oxide layer may have a capacitance based on an internal field additionally induced in the dielectric layer by the depolarization field of the imprinted polarization layer
Implementation Method 4
an electric field applied to the tunneling oxide layer may be amplified as the negative capacitance blocking oxide layer has a capacitance based on the internal field of the dielectric layer and the depolarization field of the imprinted polarization layer
Data Source
AI summary
Disclosed are a non-volatile memory including a negative capacitance blocking oxide layer, an operating method of the same, and a manufacturing method of the same. The non-volatile memory may include a tunneling oxide layer formed on a channel; a charge storage layer formed on one surface of the tunneling oxide layer; a negative capacitance blocking oxide layer in which a dielectric layer and an imprinted polarization layer are sequentially configured on one surface of the charge storage layer; and a gate formed on one surface of the negative capacitance blocking oxide layer.