Negative Capacitance Dielectric Layers for Parasitic Coupling Reduction
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Solution Overview
Problem
The miniaturization of semiconductor devices has led to increased parasitic capacitance in transistors and coupling capacitance between metal lines, resulting in decreased performance and signal integrity due to reduced signal transmission speed.
Innovation Solution
The implementation of negative capacitance (NC) dielectric layers, such as ferroelectric layers, in semiconductor devices, including sidewall spacers and interlevel dielectric layers, to reduce parasitic and coupling capacitance by canceling out capacitance components, thereby improving transistor performance and signal integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device dimensions are miniaturized to sub-nano features, then device density and integration are improved, but parasitic capacitance increases resulting in decreased performance
Solution Approach 1:
The patent applies preliminary anti-action by introducing negative capacitance dielectric layers (such as ferroelectric materials) in advance to counteract the parasitic capacitance that arises from miniaturization. The negative capacitance is deliberately engineered to cancel out the positive parasitic capacitance, thereby preventing performance degradation before it occurs.
Solution Approach 2:
The patent changes the electrical parameter of the dielectric layer by using materials with negative capacitance properties instead of conventional positive capacitance dielectrics. This parameter change allows the system to compensate for increased parasitic capacitance while maintaining miniaturized dimensions, thus improving both device density and performance.
2Productivity
If metal lines are placed closer together for higher integration, then circuit density is improved, but coupling capacitance between lines increases reducing signal integrity
Solution Approach 1:
The patent introduces negative capacitance dielectric layers as intermediary elements between adjacent metal lines. These intermediary layers act as capacitance compensators that reduce the coupling capacitance between closely spaced lines, enabling higher circuit density while maintaining signal integrity.
Solution Approach 2:
The negative capacitance dielectric layers are positioned in advance between metal lines to counteract the coupling capacitance effect before it degrades signal transmission. This preliminary anti-action allows closer line spacing without sacrificing signal integrity.
3Productivity
If gate dimensions are reduced for miniaturization, then transistor density is improved, but overlap capacitance increases causing increased leakage and reduced performance
Solution Approach 1:
The patent changes the capacitance parameter of the gate structure by incorporating negative capacitance dielectric layers in the gate stack. This parameter change reduces the total overlap capacitance of the gate, thereby decreasing leakage current and improving transistor performance while maintaining miniaturized dimensions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach achieves a significant reduction in total overlap capacitance, leading to lower gate-to-drain coupling, reduced leakage, and improved transistor performance by up to 90% reduction in capacitance, resulting in enhanced signal transmission speed and integrity.
Implementation Method 1
A negative capacitance (NC) dielectric layer such as a ferroelectric layer is disposed at each side of the gate sidewalls
Implementation Method 2
A negative capacitance (NC) dielectric layer such as a ferroelectric layer is disposed at each side of the gate sidewalls
Data Source
AI summary
A semiconductor device with reduce capacitance coupling effect which can reduce the overall parasitic capacitances is disclosed. The semiconductor device includes a gate sidewall spacer with a negative capacitance dielectric layer with and without a dielectric layer. The semiconductor device may also include a plurality of interlevel dielectric (ILD) with a layer of negative capacitance dielectric layer followed by a dielectric layer disposed in-between metal lines in any ILD and combinations. The negative capacitance dielectric layer includes a ferroelectric material which has calculated and selected thicknesses with desired negative capacitance to provide optimal total overlap capacitance in the circuit component which aims to reduce the overall capacitance coupling effect.