Negative Resist Pattern Formation via Acid-Decomposable Polymer
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Solution Overview
Problem
Conventional negative type development processes face challenges in ensuring sufficient film thickness of exposed areas in resist films after exposure and development, particularly when forming finer patterns.
Innovation Solution
A method involving a resist composition that generates an acid upon exposure and contains a high-molecular weight compound with specific constituent units, which decreases solubility in an organic solvent upon acid action, allowing for negative type development to form a resist pattern with high residual film rate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional negative type development process is used, then pattern formation is achieved, but residual film rate of exposed areas is insufficient
Solution Approach 1:
The patent changes the chemical parameters of the resist composition by incorporating specific high-molecular weight compounds (A1) with acid-decomposable groups and lactone rings. These compositional parameter changes enable the exposed areas to maintain higher residual film rates during negative type development, directly resolving the contradiction between manufacturing precision and reliability.
Solution Approach 2:
The patent uses a composite resist composition containing multiple functional components: base resin, high-molecular weight compound (A1) with specific constituent units, and acid generator. This composite material approach combines the solubility characteristics of different components to achieve both adequate film thickness and high residual film rate in exposed areas.
2Manufacturing precision
If finer patterns are formed, then resolution is improved, but film thickness of exposed areas becomes insufficient
Solution Approach 1:
The patent modifies the chemical composition parameters by introducing high-molecular weight compound (A1) with controlled molecular weight (10,000-1,000,000) and specific functional groups. This parameter change enables the resist to maintain sufficient film thickness while achieving fine pattern resolution, as the acid-decomposable groups provide selective solubility changes during development.
Solution Approach 2:
The patent implements local quality changes through the acid generator that selectively decomposes acid-decomposable groups only in exposed areas. This creates localized solubility differences: exposed areas with decomposed groups maintain higher molecular weight and lower solubility (higher residual film rate), while unexposed areas remain more soluble, enabling fine pattern formation with adequate film thickness.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively forms a negative type resist pattern with improved residual film rate of exposed areas, enhancing the resolution and reproducibility of fine patterns.
Implementation Method 1
a resist composition which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of the acid
Implementation Method 2
a resin component (A) which exhibits decreased solubility in the organic solvent under the action of the acid
Data Source
AI summary
A method for forming a negative type resist pattern having a high residual film rate of exposed areas of a resist film by heating an exposed resist film and subjecting it to patterning by negative type development with a developing solution containing an organic solvent, in which a resist composition containing a high-molecular weight compound having a constituent unit represented by a particular general formula.