Negative Resist Composition for 100 nm Isolated Space Patterns
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Solution Overview
Problem
Current pattern forming methods in semiconductor manufacturing face challenges in achieving high sensitivity, resolution, and space width roughness for fine isolated space patterns and hole patterns, particularly in submicron regions, where trade-offs between these characteristics often result in compromised performance.
Innovation Solution
A pattern forming method using an electron beam-sensitive or extreme ultraviolet ray-sensitive resin composition with specific repeating units, developed using a resin containing Formula (1-0) and Formula (1-2), and developed with an organic solvent to achieve improved sensitivity, resolution, and space width roughness, particularly for patterns with dimensions of 100 nm or less.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a positive type image forming method is used, then isolated line or dot patterns can be formed well, but the shapes of patterns deteriorate when isolated space or fine hole patterns are formed
Solution Approach 1:
The patent inverts the conventional positive type image forming method by developing a negative type image forming method using an organic solvent developer. This inversion allows the resist composition to form negative patterns (where exposed areas remain and unexposed areas are removed) rather than positive patterns, thereby achieving good shape quality for isolated space and fine hole patterns that were previously problematic in positive type methods.
2Productivity
If high sensitization is pursued, then processing time is shortened, but resolution and pattern shape are reduced
Solution Approach 1:
The patent changes the chemical parameters of the resist composition by incorporating specific resin components with controlled solubility characteristics and using an organic solvent developer instead of conventional aqueous developers. This parameter change enables the system to achieve both high sensitivity (fast processing) and high resolution by optimizing the interaction between the resist composition and the organic solvent developer, allowing rapid development without sacrificing pattern definition.
3Manufacturing precision
If fine isolated space patterns with space width of 100 nm or less are formed, then resolution is improved, but space width roughness performance deteriorates
Solution Approach 1:
The organic solvent developer acts as an intermediary that mediates between the exposed resist areas and the development process. The organic solvent provides controlled dissolution characteristics that prevent excessive etching or roughening of the pattern walls during development. This intermediary role allows the system to achieve high resolution for 100 nm or less space widths while maintaining smooth space width roughness by controlling the development kinetics and reducing capillary effects.
4Manufacturing precision
If hole patterns with fine pore diameter of 50 nm or less are formed, then resolution is improved, but exposure latitude and local pattern dimension uniformity deteriorate
Solution Approach 1:
The patent applies preliminary action by optimizing the resist composition formulation before the development process. The resist composition is pre-configured with specific resin components and molecular weight distributions that control acid diffusion and solubility characteristics. This preliminary optimization ensures that during subsequent development with the organic solvent, hole patterns with 50 nm or less pore diameter achieve both high resolution and uniform exposure latitude, as the resist is pre-conditioned to respond uniformly to exposure across the wafer surface.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method provides excellent sensitivity, resolution, and space width roughness for fine isolated space patterns and high resolution, good exposure latitude, and uniformity of local pattern dimensions for hole patterns with fine pore diameters, effectively addressing the trade-offs in existing technologies.
Implementation Method 1
exposing the film by using an electron beam or extreme ultraviolet ray
Implementation Method 2
exposing the film by using an electron beam or extreme ultraviolet ray
Implementation Method 3
developing the exposed film by using a developer containing an organic solvent to form a negative pattern
Data Source
AI summary
There is provided a pattern forming method, including: (a) forming a film by using an electron beam-sensitive or extreme ultraviolet ray-sensitive resin composition containing a resin (A) having a repeating unit represented by Formula (1-0) and a repeating unit represented by Formula (1-2); (b) exposing the film by using an electron beam or extreme ultraviolet ray; and (c) developing the exposed film by using a developer containing an organic solvent to form a negative pattern, wherein a content of the repeating unit represented by Formula (1-0) is 45 mol % or more based on a whole repeating units in the resin (A).