Negative Resist Composition for High-Resolution Pattern Formation
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Solution Overview
Problem
Current pattern formation methods in semiconductor production face challenges in achieving high-resolution, high-etching resistance, and reducing development residue defects, particularly when using KrF light, electron beams, or EUV light with organic solvent developers.
Innovation Solution
A method involving an actinic-ray- or radiation-sensitive resin composition comprising a resin with an acid-decomposable group that forms a polar group when acted on by acid, a nonionic acid generator, and a solvent, which decreases solubility in organic solvents, allowing for negative pattern formation with high resolution and etching resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a positive resist composition is used with chemical amplification for KrF exposure, then sensitivity is improved, but resolution and etching resistance deteriorate
Solution Approach 1:
The patent inverts the conventional positive resist approach by using a negative resist composition that forms negative patterns through organic solvent development. This inversion allows the use of chemical amplification with KrF exposure to achieve high sensitivity while maintaining resolution and etching resistance through the negative pattern formation mechanism and organic solvent development process.
Solution Approach 2:
The patent changes key parameters by using a negative resist composition instead of positive, employing organic solvent developers instead of aqueous developers, and utilizing specific acid generators that work with KrF exposure. These parameter changes enable simultaneous achievement of high sensitivity, resolution, and etching resistance.
2Reliability
If a negative developer comprising organic solvent is used, then pattern formation stability is improved, but development residue defects increase
Solution Approach 1:
The patent changes the developer system to use organic solvents with specific properties (low surface tension, appropriate boiling point) and adjusts the resist composition to include components that are highly soluble in these organic developers. This parameter change enables stable negative pattern formation while minimizing development residue defects through optimized solubility and development characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables the stable formation of high-precision fine patterns with reduced development residue defects and enhanced etching resistance when exposed to KrF light, electron beams, or EUV light, using a developer with organic solvents.
Implementation Method 1
the nonionic compound (B) that when exposed to actinic rays or radiation, generates an acid
Implementation Method 2
a resin (A) comprising a repeating unit containing a group that when acted on by an acid, is decomposed to thereby produce a polar group and comprising an aromatic group, which resin when acted on by an acid, decreases its solubility in an organic solvent
Data Source
AI summary
Provided is a method of forming a pattern, including forming an actinic-ray- or radiation-sensitive resin composition into a film, the actinic-ray- or radiation-sensitive resin composition including a resin (A) including a repeating unit containing a group that when acted on by an acid, is decomposed to thereby produce a polar group and including an aromatic group, which resin when acted on by an acid, decreases its solubility in an organic solvent, a nonionic compound (B) that when exposed to actinic rays or radiation, generates an acid and a solvent (C), exposing the film to actinic rays or radiation, and developing the exposed film with a developer including an organic solvent to thereby form a negative pattern.