Negative Resist Composition Using Ether Solvent for Double Patterning
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Solution Overview
Problem
The double patterning method in semiconductor manufacturing often results in 'mixing' between the first and second resist compositions, leading to thickness loss in the resist pattern, which affects the retention of the first resist pattern's shape.
Innovation Solution
A method involving the use of a first resist composition and a negative resist composition with an ether-based organic solvent having no hydroxyl groups, where the second resist composition is applied on top of the first resist pattern, and both are selectively exposed and developed to form a resist pattern with reduced thickness loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a double patterning method is used to form fine patterns, then the resolution and pattern miniaturization are improved, but thickness loss occurs in the first resist pattern due to mixing between the first and second resist compositions
Solution Approach 1:
A barrier layer is introduced between the first and second resist compositions to prevent mixing while allowing the double patterning process to proceed. The barrier layer acts as an intermediary that blocks the diffusion of resist materials into each other, thereby preventing thickness loss in the first resist pattern while still enabling the formation of fine patterns through subsequent exposure and development steps
Solution Approach 2:
The chemical composition and physical properties of the resist materials are modified to reduce mutual solubility between the first and second resist compositions. By changing parameters such as resin type, solvent selection, and cross-linking density, the resist formulations are optimized to minimize mixing while maintaining the desired lithographic performance for high-resolution pattern formation
2Adaptability or versatility
If the second resist composition is applied on top of the first resist pattern, then double patterning is achieved, but the shape of the first resist pattern deteriorates due to mixing
Solution Approach 1:
The barrier layer serves as a protective intermediary that preserves the three-dimensional shape of the first resist pattern while allowing the second resist composition to be applied and processed. This intermediary structure prevents the second resist from dissolving or mixing into the first resist, thereby maintaining the original pattern geometry throughout the double patterning process
Solution Approach 2:
The first resist pattern is formed and stabilized with protective measures (such as barrier layer deposition or cross-linking) before the second resist composition is applied. This preliminary preparation ensures that the first pattern's shape is locked in place and resistant to subsequent processing steps, preventing shape deterioration while enabling the versatility of double patterning
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces thickness loss and maintains the shape of the first resist pattern, enhancing the reliability of the resist pattern formation process.
Implementation Method 1
a negative resist composition containing an ether-based organic solvent (S′′) having no hydroxyl groups
Implementation Method 2
the resist film is subjected to selective exposure using radiation such as light or an electron beam
Data Source
AI summary
A novel method of forming a resist pattern in which thickness loss from the resist pattern is reduced, and a negative resist composition that can be used in this method of forming a resist pattern. The method of forming a resist pattern includes: forming a first resist film by applying a first resist composition to a support, forming a first resist pattern by selectively exposing the first resist film through a first mask pattern and then developing the first resist film, forming a second resist film by applying a negative resist composition containing an ether-based organic solvent (S″) having no hydroxyl groups onto the support having the first resist pattern formed thereon, and forming a resist pattern by selectively exposing the second resist film through a second mask pattern and then developing the second resist film.