Negative Tone Resist Rinse Composition to Prevent Pattern Collapse
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Solution Overview
Problem
Current lithography techniques, particularly negative tone development (NTD) processes, face issues with resist pattern deformation, collapse, and peeling due to the softening effects of organic-based developers and rinse solutions, which compromise the structural integrity of resist patterns, especially at advanced technology nodes.
Innovation Solution
The introduction of a rinse solution with increased chemical polarity by adding water, along with a dipole solvent, a low surface tension solvent, and a crosslinking agent, to enhance the structural integrity of resist patterns by forming hydrogen bonds and improving the mixing and coverage of the resist layer, while maintaining effective rinsing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If organic-based developers and rinse solutions are used in negative tone development, then effective development and rinsing are achieved, but resist pattern structural integrity deteriorates due to softening effects
Solution Approach 1:
The patent changes the chemical composition parameters of the rinse solution by incorporating water-based components with different polarity characteristics. This parameter change allows the rinse solution to effectively remove developer residues without causing the softening effect that purely organic-based solutions produce, thereby maintaining resist pattern structural integrity while achieving effective rinsing.
Solution Approach 2:
The patent employs a composite rinse solution formulation that combines water-based components with specific organic additives. This composite approach creates a synergistic effect where the water-based foundation provides structural support to the resist pattern, while the organic additives ensure effective removal of developer residues, thus resolving the contradiction between development effectiveness and structural integrity.
2Strength
If water is added to increase chemical polarity of rinse solution, then structural integrity of resist patterns is enhanced through hydrogen bonding, but mixing compatibility with organic-based developer may be reduced
Solution Approach 1:
The patent introduces amphiphilic compounds as intermediary substances in the rinse solution. These compounds possess both hydrophilic and hydrophobic characteristics, enabling them to bridge the polarity gap between water-based components and organic-based developer residues. This intermediary action ensures effective mixing and rinsing compatibility while the water-based foundation continues to provide structural support through hydrogen bonding.
Solution Approach 2:
The patent carefully adjusts the concentration parameters of water and organic additives in the rinse solution to optimize the balance between polarity and mixing compatibility. By controlling the water content within specific ranges and adjusting the concentration of amphiphilic compounds, the rinse solution achieves both enhanced structural support and effective rinsing performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces resist pattern softening, enhances structural stability, and prevents deformation and peeling, thereby improving the resolution and integrity of patterned resist layers in advanced lithography processes.
Implementation Method 1
the water penetrates into the patterned resist layer such that hydrogen bonds are formed between molecules of the water and polar functional groups of the patterned resist layer
Implementation Method 2
a rinse solution with increased chemical polarity by adding water
Implementation Method 3
a low surface tension solvent, and a crosslinking agent
Data Source
AI summary
Resist rinse solutions and corresponding lithography techniques are disclosed herein. An example lithography method includes forming a resist layer over a workpiece, exposing the resist layer to radiation, developing the exposed resist layer using a developer that removes an unexposed portion of the exposed resist layer, thereby forming a patterned resist layer, and rinsing the patterned resist layer using a rinse solution. The developer is an organic solution, and the rinse solution includes water.