NEMS Beam Structure With Parallel Conductive Layers

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Solution Overview

Problem

Existing NEMS device structures and fabrication methods have limitations in achieving optimal electrical and mechanical performance on the nanoscale, particularly in terms of resistance and area efficiency, and reliability of mechanical motion.

Innovation Solution

The NEMS device structure is formed using a back-end-of-line (BEOL) process with a beam structure composed of multiple strip conductive layers and a cap structure, featuring two supporting electrodes and a movable beam, which reduces resistance and enhances reliability through parallel connections and sacrificial layer removal techniques.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a single conductive layer is used for the beam structure, then the device complexity is reduced, but the electrical resistance increases and reliability decreases

Engineering Contradiction:
Improvereliability of mechanical motionVSAvoidbeam structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The beam structure is divided into multiple parallel conductive layers (first conductive layer, second conductive layer, third conductive layer) instead of using a single layer. This segmentation provides multiple parallel mechanical support paths, improving reliability of mechanical motion while distributing electrical current across multiple paths to reduce overall resistance.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Multiple conductive layers are merged into a single integrated beam structure that functions both mechanically and electrically. The parallel conductive layers are combined with interconnect structures to form a unified device that achieves both mechanical reliability and electrical performance simultaneously.

Inventive Principle:
Principle #5Merging (Combining)

2Reliability

If multiple parallel conductive layers are used in the beam structure, then resistance is reduced and reliability is enhanced, but the manufacturing process becomes more complex

Engineering Contradiction:
Improveelectrical performanceVSAvoidfabrication process
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The multiple conductive layers and interconnect structures are formed using preliminary patterning and deposition steps during the back-end-of-line manufacturing process. Sacrificial layers are deposited and patterned in advance to define the final beam structure geometry, making the complex multi-layer structure manufacturable through systematic preparation steps.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

Sacrificial layers (first sacrificial layer, second sacrificial layer) are used as intermediary elements during fabrication. These temporary structures guide the formation of the final conductive beam pattern and are removed after serving their purpose, enabling complex multi-layer structures to be created through simpler sequential steps.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Area of stationary object

If NEMS devices are integrated in the back-end-of-line process, then area is saved, but the mechanical motion reliability may be compromised

Engineering Contradiction:
Improvedevice areaVSAvoidmechanical motion reliability
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

The beam structure extends in multiple spatial dimensions with conductive layers arranged vertically (first conductive layer at first depth, second conductive layer at second depth, third conductive layer at third depth). This three-dimensional arrangement provides mechanical support and electrical connectivity while minimizing the planar footprint, enabling area-efficient integration in the back-end-of-line process.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS11167984B2Nano-electromechanical system (NEMS) device structure and method for forming the same
Publication Date: 2021.11.09 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US11167984B2 patent drawing
  • US11167984B2 patent drawing
  • US11167984B2 patent drawing

AI summary

A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a first dielectric layer formed over a substrate, and a first conductive layer formed in the first dielectric layer. The NEMS device structure includes a second dielectric layer formed over the first dielectric layer, and a first supporting electrode a second supporting electrode and a beam structure formed in the second dielectric layer. The beam structure is formed between the first supporting electrode and the second supporting electrode, and the beam structure has a T-shaped structure. The NEMS device structure includes a first through hole formed between the first supporting electrode and the beam structure, and a second through hole formed between the second supporting electrode and the beam structure.