Nested Active Area Layout for Stable Shallow Trench Isolation
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Solution Overview
Problem
The miniaturization of semiconductor devices poses challenges in maintaining performance due to the shrinking size and pitch of active areas, leading to limitations in the fabricating process that fail to meet practical product requirements.
Innovation Solution
A semiconductor device and method that include a substrate with a multi-layered active structure and shallow trench isolation, where the active structure consists of first, second, and third active areas with specific edge orientations, and the shallow trench isolation surrounds the active structure to enhance structural strength and prevent collapse.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the width of active areas is reduced to meet miniaturization requirements, then the device size is reduced, but the structural strength and stress resistance deteriorate
Solution Approach 1:
The patent implements a nested active area structure where first, second, and third active areas are arranged concentrically on the substrate. The first active area is surrounded by the second active area, which is in turn surrounded by the third active area. This nested arrangement allows the device to maintain a compact footprint while distributing mechanical stresses across multiple concentric rings, thereby preserving structural strength despite miniaturization.
Solution Approach 2:
The active structure is segmented into multiple distinct active areas (first, second, and third active areas) with different orientations. Each active area contains multiple active area units arranged in specific patterns. This segmentation divides the continuous structure into discrete units that can independently manage stress, preventing catastrophic failure and maintaining overall structural integrity.
2Productivity
If the pitch between active areas is reduced to increase integration density, then the circuit complexity is improved, but the manufacturing precision requirements worsen
Solution Approach 1:
The patent employs asymmetric orientation arrangements for different active areas. The first active area has units extending in a first direction, the second active area has units extending in a second direction at an angle to the first direction, and the third active area has units extending in a third direction. This asymmetric, multi-directional arrangement optimizes space utilization and allows for relaxed pitch requirements compared to uniform grid layouts, thereby reducing manufacturing precision demands while maintaining high integration density.
3Volume of moving object
If the active area width is reduced to shrink device size, then the miniaturization is achieved, but the stress distribution and structural stability worsen
Solution Approach 1:
The nested concentric arrangement of first, second, and third active areas creates a radially symmetric stress distribution pattern. Mechanical stresses applied to the miniaturized structure are distributed evenly across the concentric rings, preventing stress concentration at specific points and maintaining structural stability despite the reduced overall device size.
Solution Approach 2:
By segmenting the active structure into multiple discrete active areas with different orientations, the patent creates a modular structure where stress is distributed across multiple independent units. This segmentation prevents stress propagation through the entire structure and maintains stability even when individual units are miniaturized.
Data Source
AI summary
The present disclosure provides a semiconductor device and a method of fabricating the same, which includes a substrate, an active structure, and a shallow trench isolation. The active structure is disposed in the substrate and includes a first active area, a second active area disposed outside the first active area, and a third area disposed outside the second active area. The shallow trench isolation is disposed in the substrate to surround the active structure. Through the second active area and the third active of the active structure, the structural stability of the semiconductor device may be enhanced to improve the stress around the semiconductor device, thereby preventing from structural collapse or deformation.