3D Nested Capacitor Structure for Higher DRAM Capacitance
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Solution Overview
Problem
As DRAM processes shrink, it becomes challenging to increase the capacitance value of capacitors while maintaining reliability and preventing leakage, which is a critical technical issue in the field.
Innovation Solution
A capacitor structure is designed with a contact layer, insulating layer, bottom conductive plate, dielectric layer, and top conductive plate, featuring multiple portions arranged from periphery to center, with the dielectric layer conformally disposed on the bottom conductive plate and embedded in a conductive layer, enhancing capacitance through specific layer configurations and materials.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the capacitor area is reduced to accommodate process shrink, then the device size is reduced, but the capacitance value decreases and leakage increases
Solution Approach 1:
The patent transitions from a planar capacitor structure to a three-dimensional structure by forming conductive plates that extend vertically into the insulating layer. The bottom conductive plate and top conductive plate are separated by a dielectric layer, creating a vertical stacking configuration that increases capacitance without expanding the lateral footprint, thereby maintaining small device area while improving capacitance value and reducing leakage
Solution Approach 2:
The patent embeds the dielectric layer between the bottom conductive plate and top conductive plate, creating a nested configuration where the dielectric is positioned within the vertical space occupied by the capacitor structure. This nested arrangement maximizes the use of available volume to increase capacitance while maintaining a compact overall structure
2Volume of moving object
If the capacitor area is reduced, then the device size is reduced, but the manufacturing complexity increases
Solution Approach 1:
The capacitor structure is segmented into distinct functional layers: a bottom conductive plate, a dielectric layer, and a top conductive plate, each formed through separate manufacturing steps. The bottom conductive plate is formed first, followed by the dielectric layer, and then the top conductive plate. This segmentation allows for precise control of each layer's properties and simplifies the manufacturing process by breaking down the complex three-dimensional structure into manageable sequential steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed capacitor structure effectively increases capacitance value while maintaining structural integrity and reducing leakage, addressing the challenges of miniaturization in DRAM processes.
Implementation Method 1
how to increase the capacitance value of the capacitor has become a technical issue to be solved in this field
Implementation Method 2
The insulating layer is disposed over the contact layer and has an opening exposing the contact layer
Data Source
AI summary
A capacitor structure includes a contact layer having first, second, third, fourth and fifth portions arranged from periphery to center, an insulating layer over the contact layer and having an opening exposing the contact layer, a bottom conductive plate in the opening, a dielectric layer conformally on the bottom conductive plate and contacting the second and fourth portions of the contact layer, and a top conductive plate on the dielectric layer. The bottom conductive plate includes first, second and third portions extending along a depth direction of the opening, separated from each other, and contacting the first, third and fifth portions of the contact layer, respectively. The first portion of the bottom conductive plate surrounds the second portion of the bottom conductive plate, and the second portion of the bottom conductive plate surrounds the third portion of the bottom conductive plate.