Nested Processing Chamber for High-Pressure Semiconductor Deposition
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Solution Overview
Problem
The challenge in manufacturing modern semiconductor devices lies in achieving desired processing results at low thermal budgets, which is difficult due to small device geometries and film thicknesses, necessitating an improved system and method for processing semiconductor substrates.
Innovation Solution
A processing system with an inner chamber surrounded by an outer chamber, where the inner chamber's volume can be reduced to control pressure, allowing for high-pressure processing with less processing fluid, and a method involving a fluid handling system that delivers fluids at low pressure before increasing the chamber volume for processing, accommodating a variety of processing fluids and simplifying fluid delivery systems.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If low thermal budget processing is used, then film quality is improved, but processing results become difficult to achieve due to small device geometries and film thicknesses
Solution Approach 1:
The patent changes the pressure parameter from conventional low-pressure processing to high-pressure processing. By increasing the pressure in the processing chamber, the patent achieves better film quality and processing results while maintaining low thermal budget, effectively resolving the contradiction between film quality and processing reliability
Solution Approach 2:
The patent employs pneumatic principles by using high-pressure gas or liquid processing fluids to achieve improved film deposition and annealing results. The high-pressure fluid delivery system enables better control over the processing environment, allowing for enhanced film quality without compromising processing reliability
2Productivity
If high-pressure processing is implemented, then processing efficiency is improved, but fluid delivery system complexity increases
Solution Approach 1:
The patent employs a dynamic pressure control system that can adjust pressure levels during different stages of processing. The system transitions from low-pressure fluid delivery during loading to high-pressure processing during actual treatment, optimizing both efficiency and system simplicity through adaptive pressure management
Solution Approach 2:
The patent divides the processing chamber into distinct zones with different pressure characteristics. The inner chamber operates at high pressure for processing, while the outer chamber or fluid delivery paths can operate at lower pressures, segmenting the pressure requirements to simplify the overall fluid delivery system while maintaining high-pressure processing efficiency
3Stress or pressure
If inner chamber volume is reduced, then pressure control is improved, but chamber design complexity increases
Solution Approach 1:
The patent implements a nested chamber structure where an inner processing chamber is positioned within an outer chamber. The inner chamber can be reduced in volume for high-pressure processing while the outer chamber provides structural support and housing, nesting the complex high-pressure zone within a simpler outer structure to manage overall design complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient processing of semiconductor substrates at high pressures with reduced fluid usage, accommodating a range of processing fluids and simplifying fluid delivery systems, while maintaining high-quality film deposition and annealing results.
Implementation Method 1
reducing the internal volume of the inner chamber having the substrate therein
Data Source
AI summary
Embodiments of the disclosure relate to an apparatus and method for processing semiconductor substrates. In one embodiment, a processing system is disclosed. The processing system includes an outer chamber that surrounds an inner chamber. The inner chamber includes a substrate support upon which a substrate is positioned during processing. The inner chamber is configured to have an internal volume that, when isolated from an internal volume of the outer chamber, is changeable such that the pressure within the internal volume of the inner chamber may be varied.