Nested Floating Gate ESD Transistor for Display Protection
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Solution Overview
Problem
In display devices, the existing electrostatic discharge (ESD) devices occupy large space and require enhanced electrostatic discharge capability as pixel sizes decrease and resolution increases, making it challenging to effectively protect components from static electricity.
Innovation Solution
An electrostatic discharge device comprising a transistor with specific conductive and insulating layers forming multiple capacitors, allowing for efficient electrostatic discharge through overlapping floating gates, and a manufacturing method that includes forming conductive and insulating layers to create these capacitors, enabling reduced area occupation and increased discharge speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional ESD device structures are used, then electrostatic discharge capability can be provided, but the device occupies large space which becomes problematic as pixel sizes decrease and resolution increases
Solution Approach 1:
The patent implements nesting by placing the first floating gate within the second floating gate structure, creating a nested configuration where the first floating gate is positioned inside the region occupied by the second floating gate. This nested arrangement allows both floating gates to occupy overlapping spatial regions, significantly reducing the total area required for the ESD device while maintaining both discharge pathways functional
Solution Approach 2:
The patent transitions from a planar two-dimensional layout to a three-dimensional stacked configuration by introducing multiple floating gates at different vertical levels (first floating gate at lower level, second floating gate at upper level). This dimensional change allows the ESD device to utilize vertical space rather than only horizontal space, enabling reduced footprint while maintaining electrostatic discharge capability
2Reliability
If conventional ESD device structures are used, then basic protection is provided, but electrostatic discharge capability needs to be enhanced for higher resolutions and smaller pixels
Solution Approach 1:
The patent achieves multi-functionality by designing the transistor structure where the same components (first floating gate, second floating gate, active layer, insulating layers) serve dual purposes: they form the electrostatic discharge device for protection while simultaneously functioning as a switching transistor for display control. This eliminates the need for separate dedicated ESD protection components, enhancing discharge capability without proportionally increasing overall device complexity
Solution Approach 2:
The patent merges the ESD protection function with the transistor switching function by integrating both floating gates into a single transistor structure. The first and second floating gates are combined within the same transistor, sharing common components such as the active layer and insulating layers, thereby achieving enhanced electrostatic discharge capability through functional consolidation rather than adding separate protective components
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces the area occupied by the ESD device while enhancing its electrostatic discharge capability, protecting display components from static electricity damage by utilizing a transistor structure with multiple capacitors and a simplified manufacturing process.
Implementation Method 1
said first conductive layer, said third conductive layer, and said first insulating layer, second insulating layer and third insulating layer disposed between said first conductive layer and said third conductive layer form a first capacitor
Implementation Method 2
said second conductive layer, said third conductive layer, and said third insulating layer disposed between said second conductive layer and said third conductive layer form a third capacitor
Implementation Method 3
electrostatic discharge device and manufacturing method thereof
Data Source
AI summary
An electrostatic discharge device comprises a transistor with one of its source and drain serving as an input terminal of said device and the other serving as an output terminal. Said transistor comprises: a first conductive layer used as a first floating gate; a first insulating layer covering said first conductive layer; an active layer on said first insulating layer; a second insulating layer covering said active layer; a second conductive layer used as a second floating gate and on said second insulating layer; a third insulating layer covering said second conductive layer; a third conductive layer and a fourth conductive layer on said third insulating layer and on both sides of the active layer, said third conductive layer being isolated from the fourth conductive layer, wherein said third conductive layer serves as one of the source and the drain and said fourth conductive layer serves as the other.