Nested Lead Semiconductor Package for Thermal Stress Relief
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Solution Overview
Problem
Semiconductor devices face issues with high electrical loads causing detrimental heating and interface connection failures due to uneven thermal stress, leading to reduced performance and lifespan.
Innovation Solution
The implementation of a semiconductor package with a dual-sided heat dissipation structure, including a heat spreader, die clip, and lead frame with pre-assembled connection points, and a conductive structure with radially oriented slots to manage thermal stresses and improve assembly efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If high electrical loads are applied to semiconductor devices, then power output increases, but detrimental heating occurs leading to reduced performance and lifespan
Solution Approach 1:
The patent segments the heat dissipation function by introducing separate heat spreaders on both the top and bottom sides of the semiconductor die. This dual-sided heat dissipation structure divides the thermal management task into two independent pathways, allowing heat to be conducted away from the die in opposite directions simultaneously, thereby reducing the temperature rise caused by high electrical loads.
Solution Approach 2:
The patent introduces heat spreaders as intermediary components between the semiconductor die and the environment. These heat spreaders act as thermal mediators that conduct heat away from the die through thermal conduction, providing an efficient heat transfer pathway that reduces the detrimental heating effects while maintaining high power output capability.
2Power
If high electrical loads are applied to semiconductor devices, then power output increases, but interface connection failures occur due to uneven thermal stress
Solution Approach 1:
The patent segments the stress management function by introducing slots in the lead frame structure. These slots divide the continuous lead frame into sections, allowing differential thermal expansion and contraction in different regions. This segmentation prevents uniform stress distribution that would otherwise cause interface connection failures under high electrical loads.
Solution Approach 2:
The patent changes the structural parameters of the lead frame by incorporating slots and using materials with appropriate thermal expansion coefficients. This parameter modification allows the lead frame to accommodate thermal stress through controlled deformation, maintaining interface connection reliability even when high electrical loads generate significant thermal stress.
3Temperature
If complex heat dissipation structures are implemented, then thermal management improves, but device complexity increases
Solution Approach 1:
The patent makes the lead frame multi-functional by integrating both electrical connection and stress management functions into a single component. The lead frame serves as both the electrical interconnect and the structural element that accommodates thermal stress through its slots, eliminating the need for separate stress management components and reducing overall device complexity.
Solution Approach 2:
The patent merges the heat spreader with the lead frame structure in certain embodiments, where the lead frame itself serves as part of the heat dissipation pathway. This consolidation of thermal management and electrical connection functions into integrated structures reduces the number of discrete components while maintaining effective heat dissipation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution effectively manages thermal stresses and enhances assembly efficiency, reducing the risk of connection failures and extending the lifespan of semiconductor devices by evenly distributing thermal expansion and contraction.
Implementation Method 1
a heat spreader on the first side of the semiconductor die
Implementation Method 2
interface connection failures due to uneven thermal stress, such as uneven thermal expansion or contraction across the components
Data Source
AI summary
The present disclosure relates to a semiconductor package. The semiconductor package includes a semiconductor die and a plurality of leads. The plurality of leads includes two drain leads connected to the drain, two source leads connected to the source, a gate lead connected to the gate, the gate lead positioned between the two source leads, and a sensing lead positioned between the two source leads. The two source leads, the gate lead, and the sensing lead are positioned on a first side of the semiconductor package that is opposite to a second side of the semiconductor package, and wherein the drain leads are positioned on the second side.