Nested Remote Plasma Reactor Layout for Etch Uniformity Control
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Solution Overview
Problem
Existing remote plasma sources (RPSs) face challenges in achieving better tunability and higher etch rates due to limited power-handling capabilities, making center-to-edge profile control difficult and limiting the uniformity of plasma processing.
Innovation Solution
A resonant multi-reactor remote plasma source system is developed, comprising nested plasma reactor chambers with one in a vertical configuration and one in a horizontal configuration, each with metal pillars and ceramic spacers, allowing for independent control of plasma generation and distribution across the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single plasma reactor is used, then the device complexity is low, but the center-to-edge profile control is difficult to achieve
Solution Approach 1:
The single plasma reactor is divided into multiple nested plasma reactors (inner reactor and outer reactor), each capable of independent operation. This segmentation allows different regions of the substrate to receive plasma from different reactors, enabling precise control over the center-to-edge profile by independently adjusting plasma generation in each reactor zone.
Solution Approach 2:
Multiple plasma reactors are nested within each other, with the inner reactor positioned inside the outer reactor. This nested configuration allows both reactors to operate simultaneously and independently, providing enhanced control over plasma distribution across the substrate while maintaining a compact overall structure.
2Productivity
If a single plasma reactor is used, then the device structure is simple, but the etch rate is limited due to insufficient power-handling capabilities
Solution Approach 1:
The power handling capability is segmented across multiple nested plasma reactors, allowing each reactor to process power independently. This enables the system to handle higher total power input than a single reactor could manage, directly increasing etch rate while distributing the power handling load across multiple units.
Solution Approach 2:
Multiple plasma reactors are combined in a nested configuration where their individual power-handling capabilities are aggregated. The inner and outer reactors work together to deliver higher total power to the substrate, enabling higher etch rates that would be unattainable with a single reactor of equivalent complexity.
3Productivity
If multiple nested plasma reactors are used, then the plasma density is increased and etch rate is improved, but the device complexity increases
Solution Approach 1:
Multiple plasma reactors are nested within each other in a compact arrangement, with the inner reactor positioned inside the outer reactor. This nested design increases plasma density and etch rate by combining the output of multiple reactors while minimizing the increase in overall device footprint and structural complexity.
Solution Approach 2:
The plasma reactors are arranged in a three-dimensional nested configuration rather than a simple linear or planar arrangement. This spatial optimization allows multiple reactors to coexist in a compact volume, increasing plasma density and processing capability while controlling the overall device complexity through efficient use of vertical and radial space.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The system enhances center-to-edge profile control, improves etch rate uniformity, and increases plasma density, providing greater flexibility and stability in plasma processing.
Implementation Method 1
resonant multi-reactor remote plasma source
Data Source
AI summary
Aspects generally relate to methods and systems for advancing remote plasma technology by developing a resonant multi-reactor remote plasma source (RPS). The RPS system includes at least a first RPS and a second RPS, the first RPS contained within a boundary defined by the second RPS and a first set of spacers abutting the first RPS and a second set of spacers abutting the second RPS. The first RPS has a vertical configuration and the second RPS has a horizontal configuration. Both the first RPS and the second RPS have a rectangular shape. The first RPS has a first input port centrally disposed thereof and the second RPS has a second input port and a third input port disposed on opposed corners of the second RPS.