Nested Reaction Tube for Semiconductor Wafer Processing

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Solution Overview

Problem

Batch-type vertical substrate processing apparatuses face inefficiencies in gas supply and film formation due to large gaps between wafers and the reaction tube, leading to wasted raw materials and inferior film quality on lower wafers, with existing solutions focusing on gas flow control rather than apparatus configuration.

Innovation Solution

A substrate processing apparatus with a reaction tube configuration featuring an outer tube and an inner tube, including a first exhaust slit in the substrate arrangement region and a second exhaust slit in a lower region, enhancing gas supply efficiency and evacuation between precursor gas supply cycles.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of operation

If the gap between wafers and the reaction tube is large, then wafers can be easily loaded and positioned, but raw material cannot flow positively onto the wafers causing waste and increased costs

Engineering Contradiction:
Improvewafer loading easeVSAvoidraw material waste
Core Design Contradiction:
Ease of operationVSLoss of substance

Solution Approach 1:

The reaction tube is divided into two separate tubes: an outer tube and an inner tube. The inner tube is positioned within the outer tube, creating a nested structure. This segmentation allows the inner tube to be closer to the wafers for effective material delivery while the outer tube maintains the necessary gap for easy wafer loading and positioning.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The inner tube acts as an intermediary component between the gas supply system and the wafers. It delivers precursor gas directly to the wafer surfaces, ensuring efficient material transfer. The outer tube serves as an intermediary structure that maintains the gap for loading while allowing the inner tube to perform the material delivery function.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of operation

If the gap between wafers and the reaction tube is large, then wafers can be easily positioned, but film quality on lower wafers deteriorates due to byproduct accumulation

Engineering Contradiction:
Improvewafer positioning easeVSAvoidfilm quality uniformity
Core Design Contradiction:
Ease of operationVSManufacturing precision

Solution Approach 1:

The reaction tube is divided into two separate tubes: an outer tube and an inner tube. The inner tube is positioned within the outer tube, creating a nested structure. This segmentation allows the inner tube to be closer to the wafers for effective material delivery while the outer tube maintains the necessary gap for easy wafer loading and positioning.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different regions of the reaction system are given different qualities: the inner tube region provides concentrated precursor gas delivery directly to wafer surfaces for uniform film formation, while the outer tube region maintains the gap for loading operations. This local differentiation ensures both ease of positioning and film quality.

Inventive Principle:
Principle #3Local quality

3Loss of substance

If gas flow rate is controlled to prevent waste, then raw material utilization improves, but gas supply efficiency and evacuation speed decrease

Engineering Contradiction:
Improveraw material utilizationVSAvoidgas supply efficiency
Core Design Contradiction:
Loss of substanceVSProductivity

Solution Approach 1:

The reaction tube is divided into two separate tubes: an outer tube and an inner tube. The inner tube is positioned within the outer tube, creating a nested structure. This segmentation allows the inner tube to be closer to the wafers for effective material delivery while the outer tube maintains the necessary gap for easy wafer loading and positioning.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The dual-tube structure enables continuous efficient gas supply: the inner tube continuously delivers precursor gas directly to wafers, while the outer tube maintains the gap structure. This continuous configuration improves both material utilization and gas supply efficiency compared to flow rate control alone.

Inventive Principle:
Principle #20Continuity of useful action

4Device complexity

If the reaction tube structure is simplified, then device complexity decreases, but gas supply efficiency and film uniformity worsen

Engineering Contradiction:
Improvereaction tube structureVSAvoidfilm thickness uniformity
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The reaction tube is divided into two separate tubes: an outer tube and an inner tube. The inner tube is positioned within the outer tube, creating a nested structure. This segmentation allows the inner tube to be closer to the wafers for effective material delivery while the outer tube maintains the necessary gap for easy wafer loading and positioning.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The inner tube is nested within the outer tube, forming a concentric structure. This nesting arrangement allows both tubes to work together efficiently: the inner tube for direct gas delivery to wafers and the outer tube for maintaining the loading gap, achieving improved film uniformity without excessive complexity.

Inventive Principle:
Principle #7Nested doll (Nesting)

Data Source

PatentUS9412582B2Reaction tube, substrate processing apparatus, and method of manufacturing semiconductor device
Publication Date: 2016.08.09 KOKUSAI DENKI KK
  • US9412582B2 patent drawing
  • US9412582B2 patent drawing
  • US9412582B2 patent drawing

AI summary

A structure for constituting a process chamber in which a plurality of substrates is processed by reacting a predetermined precursor gas therein includes an outer tube having a cylindrical shape with an upper end portion closed and a lower end portion opened, and an inner tube, installed within the outer tube, including a first exhaust slit and a second exhaust slit through which the predetermined precursor gas is exhausted, the first exhaust slit located in a substrate arrangement region in which the plurality of substrates are arranged, and the second exhaust slit located in a region lower than the substrate arrangement region.