Nested Oxide-Polysilicon Transistors for Narrow Display Frames
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Solution Overview
Problem
Existing display apparatuses have a large number of transistors in their driving circuits, leading to wide frames or low resolution.
Innovation Solution
A display substrate with a base and multiple driving circuits, where each driving circuit includes a first transistor group with oxide semiconductor active layers and a second transistor group with polysilicon active layers, arranged such that the area occupied by each driving circuit is reduced.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a large number of transistors are used in the driving circuit, then the driving function is improved, but the frame width increases and resolution decreases
Solution Approach 1:
The patent implements nesting by placing the first transistor group (oxide semiconductor) inside the projection area of the second transistor group (polysilicon). Specifically, the source electrode and drain electrode of the first transistor are positioned within the source electrode and drain electrode area of the second transistor, creating a nested configuration that reduces the overall area occupied by the driving circuit while maintaining both transistor groups' functions.
Solution Approach 2:
The patent utilizes vertical layering to resolve the area contradiction. By arranging transistor groups in different layers (first transistor group in the projection area of the second transistor group), the design transitions from a two-dimensional planar layout to a three-dimensional stacked configuration, effectively reducing the horizontal frame width while accommodating multiple transistors.
2Area of moving object
If the transistor area is reduced to narrow frame width, then the frame width is improved, but the transistor performance stability may deteriorate
Solution Approach 1:
The patent applies local quality by using different transistor types in different positions within the driving circuit. The second transistor group (polysilicon) with higher mobility is placed in positions requiring strong driving capability, while the first transistor group (oxide semiconductor) with lower leakage is placed in positions requiring signal holding. This localized optimization maintains performance stability while reducing overall area.
Solution Approach 2:
The patent employs a composite transistor architecture combining two different transistor materials (oxide semiconductor and polysilicon) with complementary characteristics. The oxide semiconductor transistors provide low leakage current for signal retention, while polysilicon transistors provide high mobility for fast switching, creating a composite system that maintains stability in a reduced area.
Data Source
AI summary
A display substrate, a manufacturing method thereof and a display apparatus are provided. In the present disclosure, a first transistor group with oxide semiconductor as an active layer material is disposed on a side of a second transistor group with polysilicon as an active layer material away from the base, and an area enclosed by orthographic projections of the transistors in the first transistor group on the base is overlapped with an area enclosed by orthographic projections of the transistors in the second transistor group on the base. Stable performance of the transistors included can be ensured in a manufacturing process of the first transistor group and the second transistor group located in different layers, and at the same time, an area occupied by the driving circuit can be reduced so as to decrease a frame width of a display apparatus or improve resolution of the display apparatus.