Network Capability Classification for Precise Edge Service Matching
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Solution Overview
Problem
Existing network capabilities deployed at the network edge do not match the service requirements of applications due to inadequate performance evaluation and proximate matching without considering application-specific needs, leading to mismatches when applications are switched.
Innovation Solution
A capability calling method that classifies network capabilities based on parameters such as position, access capacity, and response delay, enabling precise matching of capabilities to application requirements through a management platform that orders and calls capabilities accordingly.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a silicon oxide layer is formed as an interlayer insulating film using a chemical vapor deposition (CVD) apparatus, then film formation speed is improved, but film density becomes insufficient and voids are generated
Solution Approach 1:
The CVD process is divided into two distinct stages: a first CVD process that forms an initial silicon oxide layer with sufficient density, and a second CVD process that forms the remaining thickness of the interlayer insulating film. This segmentation allows the first stage to focus on density while the second stage focuses on thickness, resolving the contradiction between formation speed and film density.
Solution Approach 2:
The first CVD process performs preliminary action by forming an initial silicon oxide layer with adequate density before the second CVD process adds the remaining film thickness. This preliminary dense layer serves as a foundation that prevents void formation while allowing the second stage to proceed at higher speeds to achieve the target total thickness.
2Length of moving object
If the thickness of an interlayer insulating film is reduced to 50 nm or less, then device performance is improved, but film uniformity and density control become difficult
Solution Approach 1:
Forming the thin film (50 nm or less) in two staged CVD processes allows better control of film uniformity. The first process establishes a uniform base layer, and the second process completes the thickness with precise control, preventing the uniformity issues that arise in single-step thin film formation.
Solution Approach 2:
The patent employs parameter changes by adjusting CVD process conditions (temperature, pressure, gas flow rates) between the two stages. The first CVD process uses parameters optimized for nucleation and initial layer formation, while the second process uses parameters optimized for completing the thin film with uniform thickness and density, enabling precise control of films 50 nm or thinner.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables capabilities to be ordered and called in a diversified manner, ensuring they meet application service requirements, even after server switches, thereby achieving precise service assurance.
Implementation Method 1
When a silicon oxide layer is formed as an interlayer insulating film using a chemical vapor deposition (CVD) apparatus
Data Source
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AI summary
A capability calling method, a capability calling device, a network node and a storage medium are provided. The capability calling method includes classifying, by a first network node, a capability classification corresponding to a first capability on each of at least two second network nodes in accordance with at least one parameter.