Network Membrane Debris Catcher for EUV Contamination Control
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Solution Overview
Problem
EUV lithography systems face contamination issues due to tin debris generated during the laser-produced plasma process, which affects performance and efficiency by accumulating in the scanner chamber and interfering with semiconductor manufacturing operations.
Innovation Solution
Implementing a debris catcher with a high EUV transmittance network membrane to collect and prevent tin debris from flowing from the LPP radiation source to the scanner, utilizing materials like carbon nanotubes and two-dimensional materials to maintain optical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a debris catcher is introduced to collect tin debris, then contamination in the scanner chamber is prevented, but the EUV beam path is partially blocked reducing transmittance
Solution Approach 1:
The patent employs a porous membrane as the debris catcher that allows EUV radiation to pass through while physically blocking tin debris particles. The porous structure provides sufficient open area for high EUV transmittance while the pore walls are small enough to trap nanometer-scale debris, resolving the contradiction between contamination prevention and beam transmittance
Solution Approach 2:
The debris catcher utilizes composite material structures combining different materials with complementary properties - one material provides high EUV reflectivity/transmittance while another provides effective debris trapping capability. This composite approach allows simultaneous optimization of both contamination prevention and optical performance
2Object-affected harmful factors
If conventional filtering materials are used to block debris, then contamination is reduced, but EUV transmittance decreases significantly
Solution Approach 1:
The filtering structure is designed with locally optimized properties where the pore size, wall thickness, and material composition are specifically tailored to provide maximum debris blocking at critical locations while maintaining high transmittance in the EUV beam path. The local quality varies across the structure to balance filtration and optical requirements
Solution Approach 2:
Instead of using a conventional two-dimensional filter that blocks the beam, the patent employs a three-dimensional porous structure with controlled porosity and tortuous pathways. This dimensional approach allows EUV photons to pass through the volume while debris particles are trapped by the complex internal geometry, maintaining beam intensity while improving filtration
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Effectively traps tin debris, ensuring high EUV transmittance and preventing contamination in the scanner chamber, thereby maintaining the efficiency and performance of the EUV lithography system.
Implementation Method 1
a debris catcher with a high EUV transmittance network membrane to collect and prevent tin debris from flowing
Implementation Method 2
utilizing materials like carbon nanotubes and two-dimensional materials to maintain optical performance
Data Source
AI summary
An extreme ultra violet (EUV) lithography apparatus includes a light source that generates an EUV light beam, a scanner that receives the light from a junction with the light source and directs the light to a reticle stage, and a debris catcher disposed on a EUV beam path between the light source and the scanner. The debris catcher includes a network membrane including a plurality of nano-fibers.