Neural Interface Dual-Clip Design for Small-Nerve Insertion
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Solution Overview
Problem
Existing neural interfaces using shape memory polymers are unsuitable for long-term use due to high glass transition temperatures and thick substrates, leading to instability and difficulty in inserting into small nerves, and the use of E-Beam for metal deposition is costly, limiting mass production.
Innovation Solution
A neural interface with a dual clip design utilizing a shape memory polymer with a low glass transition temperature and a fabrication method involving sputtering and photolithography processes to pattern conductive materials, eliminating the need for pre-metal layer processes and reducing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If shape memory polymers with high glass transition temperature are used, then the neural interface can maintain structural stability, but the softness at room or body temperature is insufficient and the shape memory effect cannot be utilized at physiological temperatures
Solution Approach 1:
The patent changes the glass transition temperature parameter of the shape memory polymer from high (66.3°C) to low (44°C), enabling the polymer to exhibit shape memory effects at physiological temperatures while maintaining structural stability. This parameter modification allows the neural interface to be soft and flexible at body temperature for easy insertion into small nerves.
2Strength
If thick substrates are used in neural interfaces, then the structural integrity is improved, but the overall neural interface becomes thicker, reducing stability for long-term use and making insertion into very small peripheral nerves difficult
Solution Approach 1:
The patent employs thin film substrates with optimized thickness that maintain sufficient structural integrity while enabling easy insertion into very small peripheral nerves. The thin film design reduces the overall thickness of the neural interface, improving stability for long-term use while preserving the necessary mechanical strength through the use of high-performance polymer materials.
3Manufacturing precision
If E-Beam is used for depositing gold conductive layers, then the conductive layer can be deposited with high precision, but the process cost increases, making it unsuitable for mass production
Solution Approach 1:
The patent replaces the expensive E-Beam deposition process with a more cost-effective sputtering process for depositing gold conductive layers. This substitution maintains adequate deposition precision for neural interface applications while significantly reducing manufacturing costs, making the process suitable for mass production of neural interfaces.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The neural interface can be easily inserted into small nerves with minimal tissue damage, providing stable fixation and suitable for mass production, with improved biocompatibility and reduced process costs.
Implementation Method 1
the low glass transition temperature (44° C. in a dry state) enables morphological transformation through the shape memory effect without stressing the biological tissues
Implementation Method 2
sputtering an electrode material
Data Source
AI summary
Disclosed herein are a neural interface and a method for fabricating the neural interface. The neural interface comprises: an electrode section for neural stimulation and neural signal recording; a first region defined by a first hole; and a second region defined by a second hole disposed within the first region, wherein the electrode section comprises a first electrode section and a second electrode section, either the first electrode section or the second electrode section being disposed within the second region.The fabricating method comprises the steps of synthesizing a shape memory polymer; first coating a substrate with the shape memory polymer; forming a photoresist on the shape memory polymer; masking the photoresist; sputtering an electrode material; patterning the electrode material through a photolithography process; second coating the shape memory polymer; and etching the shape memory polymer.


