Neuromorphic Device Magnetic Domain Wall Element Segmentation

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Solution Overview

Problem

Current neuromorphic devices face challenges in increasing the integration of variable resistance elements while maintaining a high identification rate, as smaller elements lead to decreased identification rates.

Innovation Solution

A neuromorphic device design featuring two groups of magnetic domain wall movement elements with different lengths and resistance changing rates, where the first group has a shorter magnetic domain wall movement layer and higher resistance changing rate, and the second group has a longer layer and lower critical current density, integrated in a laminated structural body with specific overlapping and positioning configurations to enhance integration and identification.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the size of variable resistance elements is decreased to increase integration, then the integration of variable resistance elements is improved, but the identification rate of the neuromorphic device decreases

Engineering Contradiction:

Improveintegration of variable resistance elementsVSAvoididentification rate

Core Design Contradiction:

Quantity of substanceVSMeasurement precision

Solution Approach 1:

The patent applies local quality by creating two distinct groups of magnetic domain wall movement elements with different characteristics: the first group has shorter magnetic domain wall movement layers for higher resistance changing rates, while the second group has longer layers for lower critical current densities. This local differentiation allows each group to optimize for specific functions, resolving the contradiction between integration and identification rate.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The neuromorphic device is segmented into two element groups with different structural parameters. The first element group contains elements with shorter magnetic domain wall movement layers, while the second element group contains elements with longer layers. This segmentation allows the system to simultaneously achieve high integration through compact first-group elements and high identification accuracy through the second group elements.

Inventive Principle:

Principle #1Segmentation

2Manufacturing precision

If the length of magnetic domain wall movement layer is decreased, then the resistance changing rate is improved, but the critical current density increases

Engineering Contradiction:

Improveresistance changing rateVSAvoidcritical current density

Core Design Contradiction:

Manufacturing precisionVSUse of energy by moving object

Solution Approach 1:

Different magnetic domain wall movement elements are designed with different local qualities - specifically, different layer lengths tailored to their functional requirements. First-group elements have shorter layers optimized for high resistance changing rates, while second-group elements have longer layers optimized for low critical current densities, allowing each to excel at its specific function without compromise.

Inventive Principle:

Principle #3Local quality

Solution Approach 2:

The patent segments the magnetic domain wall movement elements into two categories based on layer length. This segmentation enables the system to have some elements optimized for resistance changing (shorter layers) and others optimized for energy efficiency (longer layers), resolving the trade-off between these two parameters.

Inventive Principle:

Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The design achieves high integration and improved identification rates by optimizing the configuration of magnetic domain wall movement elements, allowing for more precise resistance value changes and increased storage capacity.

Implementation Method 1

Magnetoresistance effect elements using resistance value changes (magnetoresistance changes) based on changes in the relative angle of magnetization of two ferromagnetic layers are known

Methodology Applied

Scientific EffectMagnetoresistance effect: Magnetoresistance

Implementation Method 2

a magnetic domain wall movement element includes a magnetic domain wall movement layer, a ferromagnetic layer, and a non-magnetic layer interposed between the magnetic domain wall movement layer and the ferromagnetic layer

Methodology Applied

Scientific EffectMagnetic domain wall movement:

Data Source

PatentUS12131252B2Neuromorphic device

Publication Date: 2024.10.29 TDK CORP

AI summary

A neuromorphic device includes: first and second element groups, in which each includes magnetic domain wall movement elements, each of which includes magnetic domain wall movement and ferromagnetic layers, and a non-magnetic layer between the magnetic domain wall movement and ferromagnetic layers, a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the first element group in a longitudinal direction is shorter than a length of the magnetic domain wall movement layer of each of the magnetic domain wall movement elements belonging to the second element group in the longitudinal direction, and a resistance changing rate when a predetermined pulse is input is higher for each of the magnetic domain wall movement elements belonging to the first element group than for each of the magnetic domain wall movement elements belonging to the second element group.