Neuromorphic Memory Array Using STDP and LIF Circuits

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Solution Overview

Problem

Current neuromorphic memory systems lack efficient models for simulating synaptic plasticity and learning mechanisms, which are essential for mimicking biological brain functions in neuromorphic computing applications.

Innovation Solution

A neuromorphic memory system is developed with neuromorphic memory arrays that incorporate postsynaptic circuits and summing circuits, utilizing spike timing-dependent plasticity (STDP) and leaky integrate and fire (LIF) models to program and read synaptic memory cells, with resistive memory elements emulating synapses and neuron circuits driving these processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If traditional digital models are used for neuromorphic computing, then the system structure is simple and easy to manufacture, but the system cannot effectively simulate synaptic plasticity and learning mechanisms

Engineering Contradiction:
Improveability to simulate synaptic plasticity and learning mechanismsVSAvoidsystem structure complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent replaces traditional digital computational models with biologically-inspired neural circuit models that use electrical signals and membrane potential dynamics to simulate synaptic plasticity and learning mechanisms, enabling neuromorphic functionality while maintaining electronic implementation

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent changes the operational parameters from binary digital states to continuous membrane potential values and synaptic conductance levels, allowing the system to simulate graded neural responses and spike-timing-dependent plasticity that are essential for biological-like learning

Inventive Principle:
Principle #35Parameter changes

2Measurement precision

If spike timing-dependent plasticity models are implemented, then the learning mechanism accuracy is improved, but the computational complexity and energy consumption increase

Engineering Contradiction:
Improvelearning mechanism accuracyVSAvoidenergy consumption
Core Design Contradiction:
Measurement precisionVSUse of energy by moving object

Solution Approach 1:

The patent implements spike-based periodic signaling where neurons communicate through discrete action potentials rather than continuous signals, reducing energy consumption while maintaining the ability to encode information through spike timing patterns for STDP learning

Inventive Principle:
Principle #19Periodic action

Solution Approach 2:

The patent employs leaky integrate-and-fire neuronal models that automatically reset after firing and passive membrane potential decay that naturally returns neurons to resting state, eliminating the need for active reset mechanisms and reducing overall energy consumption while preserving learning functionality

Inventive Principle:
Principle #25Self-service

3Reliability

If detailed neuron models with multiple circuits are used, then the biological fidelity is improved, but the device complexity and manufacturing difficulty increase

Engineering Contradiction:
Improvebiological fidelityVSAvoidmanufacturing ease
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent segments the neuromorphic system into modular functional blocks including separate neuronal cell bodies, synapses, and peripheral circuits that can be independently designed and manufactured, then assembled into larger neural networks, improving manufacturability while maintaining biological fidelity

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent designs universal neuronal and synaptic circuit modules that can be replicated and configured to implement different neural network architectures and learning rules, including STDP, through parameter adjustment rather than structural modification, simplifying manufacturing while preserving biological realism

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The system effectively simulates synaptic plasticity and learning mechanisms, enabling efficient neuromorphic computing by adjusting synaptic weights based on spike timing, thereby enhancing the neuromorphic memory system's ability to mimic biological brain functions.

Implementation Method 1

utilizing spike timing-dependent plasticity (STDP) and leaky integrate and fire (LIF) models to program and read synaptic memory cells

Methodology Applied
Scientific EffectSpike timing-dependent plasticity (STDP):

Implementation Method 2

resistive memory elements emulating synapses

Methodology Applied
Scientific EffectElectrical Resistance: Electrical Resistance

Implementation Method 3

utilizing spike timing-dependent plasticity (STDP) and leaky integrate and fire (LIF) models to program and read synaptic memory cells

Methodology Applied
Scientific EffectLeaky integrate and fire (LIF):

Implementation Method 4

neuron circuits driving these processes

Methodology Applied
Scientific EffectElectrical signal transmission: Conduction (electrical)

Data Source

PatentUS10810489B2Neuron peripheral circuits for neuromorphic synaptic memory array based on neuron models
Publication Date: 2020.10.20 SAMSUNG ELECTRONICS CO LTD
  • US10810489B2 patent drawing
  • US10810489B2 patent drawing
  • US10810489B2 patent drawing

AI summary

A neuromorphic memory system including neuromorphic memory arrays. The neuromorphic memory system includes a presynaptic neuron circuit coupled to a postsynaptic neuron circuit by a resistive memory cell. The method includes generating a presynaptic LIF pulse on a presynaptic LIF line at time t1. An activating operation activates an access transistor coupled to the presynaptic LIF line in response to the presynaptic LIF pulse. The access transistor enables LIF current to pass through the resistive memory cell to a postsynaptic LIF line. An integrating operation integrates the LIF current at the postsynaptic LIF line over time. A comparing operation compares a LIF voltage at the postsynaptic LIF line to a threshold voltage. A generating operation generates a postsynaptic spike timing dependent plasticity (STDP) pulse on a postsynaptic STDP line if the LIF voltage is beyond the threshold voltage.