Neuromorphic Synapse Parallel Transistor Linear Resistance
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Solution Overview
Problem
Conventional neuromorphic devices with variable resistors exhibit non-linear and abrupt resistance variations, making it difficult to store and output accurate data due to insufficient resistance levels.
Innovation Solution
The neuromorphic device incorporates a synapse structure with a variable resistor and transistors connected in parallel, including multiple transistors in series and parallel configurations, which allows for gradual and linear resistance variations by adjusting channel widths and threshold voltages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a conventional variable resistor is used in a synapse, then the device structure is simple, but the resistance varies non-linearly and abruptly, reducing data accuracy
Solution Approach 1:
The patent merges a variable resistor with one or more transistors into a composite synapse structure. The variable resistor provides the base resistance element while the transistor(s) modulate the resistance in a controlled manner, combining the simplicity of resistive memory with the controllability of transistor-based devices to achieve linear and gradual resistance variations.
Solution Approach 2:
The patent changes the electrical parameters of the synapse by introducing transistors with specific threshold voltages and channel widths. By adjusting these transistor parameters, the resistance variation characteristics are transformed from non-linear and abrupt to linear and gradual, improving data accuracy without significantly complicating the overall structure.
2Manufacturing precision
If multiple transistors are added in parallel with the variable resistor, then resistance levels increase and linearity improves, but the device complexity increases
Solution Approach 1:
The patent segments the resistance control function by using multiple transistors with different threshold voltages and channel widths. Each transistor contributes to a specific portion of the resistance range, allowing fine-grained control over resistance levels. This segmentation enables precise manufacturing control while keeping each individual transistor relatively simple.
Solution Approach 2:
Different regions of the synapse structure are assigned different functions: the variable resistor provides the base resistance, while specific transistors are positioned and sized to provide localized control over different segments of the resistance range. This local quality approach allows optimized control without requiring complex interconnections throughout the entire structure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables more gradual current and resistance variations, providing multiple resistance levels and improving data accuracy by slowing down resistance changes with applied pulses, thus enhancing the neuromorphic device's learning and recognition capabilities.
Implementation Method 1
The synapse includes a variable resistor having gradual and linear resistance variations
Implementation Method 2
a first transistor electrically coupled between the first node and the second node, wherein the variable resistor and the first transistor are electrically connected with each other in parallel
Data Source
AI summary
A neuromorphic device may include a pre-synaptic neuron, a row line extending in a row direction from the pre-synaptic neuron, a post-synaptic neuron, a column line extending in a column direction from the post-synaptic neuron, and a synapse disposed at an intersection region between the row line and the column line. The synapse may include a first node electrically connected with the row line, a second node electrically connected with the column line, and a variable resistor and a first transistor electrically coupled between the first node and the second node. The variable resistor and the first transistor may be electrically connected with each other in parallel.