Neutral Atom Beam Surface Treatment for Semiconductor Interconnects
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Solution Overview
Problem
The CMP process causes damage to the surface of dielectric layers in semiconductor structures, particularly those with ultra-low-k dielectric materials, leading to reliability issues in interconnects, and the lack of alloy element segregation on copper surfaces reduces electromigration resistance.
Innovation Solution
Applying a neutral atom beam treatment to densify the dielectric layer surface and create point defects on the copper surface, promoting the segregation of alloy elements and enhancing electromigration resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a chemical-mechanical planarization (CMP) process is used to form metallic conductors in dielectric layers, then the interconnect structure can be formed with desired planarity, but the surface of the dielectric layer becomes damaged, reducing reliability
Solution Approach 1:
A surface treatment process acts as an intermediary step between CMP and subsequent processing. This treatment process repairs CMP-induced damage to the dielectric layer surface without removing the planarity achieved by CMP, thereby restoring reliability while preserving manufacturing precision.
Solution Approach 2:
The patent replaces the mechanical polishing action of CMP with a chemical or physical vapor deposition-based surface treatment process. This substitution allows for repair of surface damage without the mechanical forces that cause degradation, particularly for ultra-low-k dielectric materials.
2Reliability
If alloy elements are introduced into copper interconnects to enhance electromigration resistance, then EM resistance should improve, but the alloy elements do not segregate onto the Cu surface, degrading the expected EM resistance enhancement
Solution Approach 1:
The surface treatment process is applied preliminarily to create surface conditions (such as point defects or modified surface energy) that promote subsequent segregation of alloy elements to the Cu surface. This preliminary action sets the stage for achieving the desired composition stability and EM resistance.
Solution Approach 2:
The surface treatment process changes physical or chemical parameters of the Cu surface (such as surface energy, defect density, or crystal structure) to create favorable conditions for alloy element segregation. These parameter changes enable the alloy elements to migrate to the surface where they can provide the intended EM resistance enhancement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The treatment effectively remedies CMP-induced damage by densifying the dielectric layer and promoting alloy element segregation, thereby improving the reliability and electromigration resistance of interconnects.
Implementation Method 1
the surface treatment is a neutral atom beam treatment
Implementation Method 2
create point defects on the copper surface, promoting the segregation of alloy elements
Data Source
AI summary
A method includes forming a dielectric layer and forming a metallic conductor at least partially in the dielectric layer. Formation of the metallic conductor at least partially in the dielectric layer includes performing a planarization process. The method further includes treating respective surface areas of the dielectric layer and the metallic conductor, after the planarization process, to modify the respective surface areas of the dielectric layer and the metallic conductor. In one example, the surface treatment is a neutral atom beam treatment.