Neutral Beam Atomic Layer Deposition for Damage-Free Semiconductor Processing
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Solution Overview
Problem
Current semiconductor etching and deposition technologies, such as high-density plasma apparatuses and CVD methods, cause physical and electrical damage to nanometer-scale semiconductor devices due to ion bombardment and high temperatures, leading to reliability and productivity issues.
Innovation Solution
An atomic layer deposition apparatus using a low-temperature neutral beam generated by reflecting energetic ions, which converts ion beams into neutral beams to deposit atomic layers without charging, thereby avoiding electrical damage and achieving precise thickness control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If high-density plasma apparatus or reactive ion etcher is used for nanometer-scale semiconductor devices, then etching or deposition can be performed, but physical and electrical damage occurs to the substrate or material layer due to ion bombardment
Solution Approach 1:
The patent converts the harmful ion beam into a useful neutral beam by passing ions through a gas target, where they undergo charge exchange to become neutral atoms. This neutral beam then reacts with the substrate to perform etching or deposition without causing ion-related damage such as charging effects or physical bombardment damage.
Solution Approach 2:
The patent introduces a gas target as an intermediary medium between the ion source and the substrate. The ion beam first interacts with the gas target to be neutralized, and then the resulting neutral beam interacts with the substrate. This intermediary step eliminates the harmful effects of direct ion-substrate interaction while maintaining the reactivity needed for processing.
2Ease of manufacture
If CVD method is used for depositing thin layers, then excellent step coverage and high yield are achieved, but the temperature of the thin layer during formation is very high and thickness control precision is limited
Solution Approach 1:
The patent replaces the thermal field-based CVD process with a particle beam-based physical vapor deposition process. Instead of using high temperature to drive chemical reactions, the invention uses a neutral atom beam to directly deposit material onto the substrate, enabling precise thickness control through beam parameter regulation rather than thermal control.
3Manufacturing precision
If ALD method is used for depositing atomic layers, then uniform thickness with atomic layer precision is achieved, but the process requires high temperature or plasma which can cause damage
Solution Approach 1:
The patent converts the harmful plasma or high-temperature requirement of ALD into a benign neutral beam process. By neutralizing the ion beam before it reaches the substrate, the process maintains the precise atomic-layer deposition capability while eliminating the damaging effects of plasma ions and high temperatures.
4Reliability
If sputtering method is used for forming thin layers, then highly pure layers with excellent adhesion are obtained, but uniformity across the entire thin layer is very difficult to achieve
Solution Approach 1:
The patent replaces the momentum-transfer-based sputtering process with a direct neutral beam deposition process. In sputtering, uniformity is difficult to achieve due to angular distribution of sputtered particles and shadow effects. The neutral beam method delivers atoms in a more controlled, directional manner, improving uniformity while maintaining purity and adhesion through the high energy of the neutral atoms.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus enables damage-free atomic layer deposition with precise thickness control and reduced contamination, enhancing the reliability and productivity of nanometer-scale semiconductor devices by using a neutral beam to deposit materials like Si, nitrides, and metal oxides without electrical damage.
Implementation Method 1
an ion source extracting an ion beam having a polarity from gas injected through an inlet
Implementation Method 2
a grid assembly located at one end of the ion source and having a plurality of grid holes accelerating a specific polarity of ion beam
Implementation Method 3
a reflective body having a plurality of reflective body holes or slits corresponding to the grid holes of the grid assembly, and reflecting the ion beam passing through the grid holes inside the reflective body holes or the slits to convert the ion beam into a neutral beam
Implementation Method 4
reflecting the ion beam passing through the grid holes inside the reflective body holes or the slits
Data Source
AI summary
Disclosed are an atomic layer deposition apparatus using a neutral beam and a method of depositing an atomic layer using the apparatus, capable of converting an ion beam into a neutral beam and radiating it onto a substrate to be treated. The method uses an apparatus for supplying a first reaction gas containing a material that cannot be chemisorbed onto a substrate to be treated into a reaction chamber in which the substrate is loaded, and forming a first reactant adsorption layer containing a material that cannot be chemisorbed onto the substrate; and radiating a neutral beam generated by the second reaction gas onto the substrate on which the first reactant adsorption layer is formed, and removing a material not chemisorbed onto the substrate from the first reactant adsorption layer to form a second reactant adsorption layer. It is possible to perform a process without damage due to charging with the apparatus for depositing an atomic layer using a neutral beam and the method of depositing an atomic layer using the apparatus.