Neutral Beam EUV Source Using Head-On Electron-Ion Collision
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Solution Overview
Problem
Current semiconductor processing technologies face challenges in generating both extreme ultraviolet (EUV) light and neutral beams efficiently, particularly due to issues related to ion beam scattering and the use of metal-reflectors which can lead to contamination and performance degradation.
Innovation Solution
A device and method that simultaneously generate EUV light and a neutral beam by colliding an ion beam with a second electron beam, utilizing electromagnetic control devices to direct the electron beam and maintain neutral atoms, thereby avoiding the need for metal-reflectors and improving process precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If metal-reflectors are used to transmit and project EUV light, then EUV light transmission is achieved, but contamination and performance degradation occur
Solution Approach 1:
The patent extracts and eliminates metal-reflectors from the EUV light transmission system. Instead of using reflective optics, the invention employs direct EUV light generation through electron-ion collision, removing the source of contamination and performance degradation associated with metal-reflectors while maintaining EUV light delivery capability
Solution Approach 2:
The patent replaces the mechanical/optical system of metal-reflectors with a direct generation approach using electron-ion collision. This substitution eliminates the need for physical reflective surfaces, thereby preventing contamination issues while achieving EUV light transmission through a fundamentally different physical mechanism
2Productivity
If ion beam is used for etching process, then etching capability is achieved, but electric charge accumulation causes processing problems
Solution Approach 1:
The patent introduces a neutralizing electron beam as an intermediary that collides with the ion beam to convert charged ions into neutral atoms. This intermediary process maintains the etching capability of the ion beam while eliminating the harmful electric charge accumulation through charge neutralization
Solution Approach 2:
The patent converts the harmful electric charge of ions into a beneficial neutral state through electron-ion collision. The charged ions that cause processing problems are transformed into neutral atoms that retain etching capability without charge accumulation issues, turning a harmful property into a beneficial one
3Device complexity
If ion beam is used directly, then beam generation is simple, but beam scattering occurs reducing precision
Solution Approach 1:
The patent introduces a first electron beam as an intermediary that interacts with the ion beam to reduce scattering. This intermediary electron beam modifies the ion beam characteristics, reducing scattering effects while maintaining the relative simplicity of direct ion beam generation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively generates high-intensity EUV light with specified wavelengths and a high-output neutral beam, addressing contamination and performance issues associated with traditional methods, while enhancing precision and reducing particle-related problems.
Implementation Method 1
a second electron beam source configured to generate and output a second electron beam, which collides with the ion beam; a first electromagnetic control device configured to control a traveling direction of the second electron beam to cause the second electron beam to collide head-on with the ion beam to generate a neutral beam and EUV light
Implementation Method 2
a first electron beam source configured to generate a first electron beam incident on the ion beam to reduce scattering of the ion beam
Implementation Method 3
cause the second electron beam to collide head-on with the ion beam to generate a neutral beam and EUV light
Data Source
AI summary
A neutral beam and extreme ultraviolet (EUV) light-generating device capable of generating EUV light while generating a neutral beam. The neutral beam and EUV light-generating device includes: an ion beam source configured to generate an ion beam and to output the ion beam in a first direction, a first electron beam source configured to generate a first electron beam incident on the ion beam, a second electron beam source configured to generate and output a second electron beam, and a first electromagnetic control device configured to control a traveling direction of the second electron beam to cause the second electron beam to collide head-on with the ion beam to generate a neutral beam and EUV light.