Neutral Beam Annealing for Thin-Film Heating Without Substrate Damage
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing annealing apparatuses damage organic film substrates during the annealing process of thin-film layers in display apparatuses due to increased temperature, which affects the quality of the thin-film layers.
Innovation Solution
A neutral beam annealing apparatus is designed with a plasma chamber, induction coils, and a second electrode to generate and control neutral particles that selectively heat the thin-film layer surface, reducing substrate damage and improving layer quality by adjusting the energy of neutral particles using Equation ENB=Vth×e(-XL) and applying a second voltage less than or equal to 1 volt, with the second gas being an inert gas like argon.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If existing annealing apparatus is used to anneal thin-film layer, then annealing effect is achieved, but substrate temperature increases causing damage to organic film
Solution Approach 1:
The patent applies local quality by directing neutral particle beams specifically at the thin-film layer surface while maintaining substrate temperature below damage thresholds. The neutral beam delivers localized energy (0.05-1 eV) to the thin-film layer for annealing without heating the entire substrate, thus achieving high-quality thin-film layers while preventing organic film damage.
Solution Approach 2:
The patent changes the energy parameter of the neutral particles to a specific range (0.05-1 eV) that is sufficient for thin-film layer annealing but insufficient to damage the organic substrate. By controlling the neutral beam energy and substrate temperature (maintaining below 150°C), the process achieves effective annealing while avoiding substrate damage.
2Manufacturing precision
If high energy is used to heat the thin-film layer, then annealing effectiveness is improved, but substrate temperature increases causing damage
Solution Approach 1:
The neutral beam annealing process delivers energy locally to the thin-film layer surface rather than heating the entire substrate. The energy is concentrated at the thin-film layer interface, achieving effective annealing while the substrate remains cool (temperature increase controlled below 150°C), thus improving thin-film quality without excessive substrate heating.
Solution Approach 2:
The patent optimizes the neutral particle energy parameter to 0.05-1 eV, which provides sufficient heating effect for the thin-film layer while limiting heat penetration to the substrate. This parameter control enables effective annealing of the thin-film layer while maintaining substrate temperature within safe limits.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The neutral beam annealing apparatus effectively reduces thermal damage to the substrate while achieving a high-quality thin-film layer by selectively heating the surface to a depth of several angstroms to nanometers, outperforming comparative methods like ion, laser, and infrared heating in temperature control.
Implementation Method 1
an induction coil which is wound around an outer circumference of the plasma chamber and receives a high-frequency voltage from a high-frequency power supply
Implementation Method 2
a first gas supplier which supplies, inside the plasma chamber, a first gas for forming plasma
Implementation Method 3
a pressure controller which supplies a second gas to the annealing chamber... the energy (ENB) of the neutral particles reaching the upper surface of the substrate may be from about 0.05 electronvolt (eV) to about 1 eV
Data Source
AI summary
A neutral beam annealing apparatus includes a plasma chamber having a cylinder shape, a first gas supplier to supply a first gas for forming plasma, a first electrode coupled to an upper surface of the plasma chamber, an induction coil wound around an outer circumference of the plasma chamber to receive a high-frequency voltage from a high-frequency power supply, a second electrode which is coupled to a lower surface of the plasma chamber, and in which through holes are defined, a substrate support supporting a substrate to be annealed and adjusting a vertical distance between the substrate and the second electrode, an annealing chamber accommodating the substrate support, and a pressure controller which supplies a second gas to the annealing chamber.