Neutral Particle Beam for Low-Temperature Mobile Proton Layer Formation
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Solution Overview
Problem
Existing methods for manufacturing nonvolatile memory devices require high-temperature hydrogen heat treatment, restricting the use of substrates like glass and plastic and limiting semiconductor layer material selection due to the lengthy and complex process.
Innovation Solution
A method using a neutral particle beam generation apparatus to form a mobile proton layer at 300° C. or less in a short time by converting hydrogen plasma ions into neutral particles, which are then accumulated on an insulating film, allowing for the formation of a nonvolatile memory thin film device without the need for high-temperature heat treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-temperature hydrogen heat treatment process is used to generate mobile protons, then mobile proton layer can be formed, but the process requires 600°C or more for tens of minutes which restricts substrate selection and increases process complexity
Solution Approach 1:
The patent replaces the thermal field (heat treatment) with a particle beam field (neutral particle beam irradiation). Instead of using high-temperature hydrogen heat treatment to generate mobile protons, the invention uses neutral particle beam irradiation at room temperature or low temperatures to directly form the mobile proton layer, thereby resolving the contradiction between achieving reliable mobile proton layer formation and avoiding high temperature processes that restrict substrate selection
Solution Approach 2:
The patent changes the fundamental parameter of the process from high temperature (600°C or more) to low temperature or room temperature. By using neutral particle beam irradiation instead of thermal treatment, the process temperature parameter is dramatically reduced, enabling the use of flexible substrates like plastic films and glass that cannot withstand high temperatures, while still achieving the desired mobile proton layer formation
2Reliability
If high-temperature heat treatment process is used for tens of minutes, then mobile protons can be generated, but the process time is long and process complexity increases
Solution Approach 1:
The patent replaces the slow thermal diffusion process with a direct particle beam irradiation process. The neutral particle beam delivers hydrogen atoms directly to the insulating film, rapidly forming the mobile proton layer in a much shorter time compared to the slow thermal diffusion required in high-temperature heat treatment, thereby reducing process time and increasing productivity
Solution Approach 2:
The patent performs the mobile proton layer formation as a preliminary step before forming the semiconductor layer, using neutral particle beam irradiation to create the mobile proton layer in advance. This preliminary action eliminates the need for subsequent high-temperature heat treatment after semiconductor layer formation, reducing overall process time and allowing greater flexibility in semiconductor material selection
3Reliability
If high-temperature heat treatment process is used, then mobile protons can be generated, but substrates such as glass and plastic film cannot be used
Solution Approach 1:
The patent replaces the high-temperature thermal field with a low-energy neutral particle beam field that does not require high temperatures. This substitution enables the use of temperature-sensitive substrates such as plastic films and glass, which cannot withstand 600°C or more, while still achieving reliable mobile proton layer formation. The neutral particle beam process can be performed at room temperature or low temperatures, expanding substrate compatibility
Solution Approach 2:
The patent changes the temperature parameter from high temperature (600°C or more) to low temperature or room temperature, fundamentally altering the process conditions. This parameter change enables the use of flexible substrates like plastic films and glass that have low temperature withstand limits, thereby significantly improving adaptability and versatility of substrate selection while maintaining mobile proton layer formation capability
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the production of high-performance nonvolatile memory thin film devices on glass or plastic substrates, suitable for flexible and wearable devices, by forming mobile proton layers at low temperatures in a short time, overcoming the limitations of traditional high-temperature processes.
Implementation Method 1
a gas supply port for supplying gas to the inside of the chamber; converting hydrogen plasma ions generated in the chamber into hydrogen neutral particles by colliding the hydrogen plasma ions with the reflector
Implementation Method 2
converting hydrogen plasma ions generated in the chamber into hydrogen neutral particles by colliding the hydrogen plasma ions with the reflector
Implementation Method 3
forming a mobile proton layer by accumulating the hydrogen neutral particles on a surface of the first insulating film
Data Source
AI summary
The present invention relates to a method for manufacturing a nonvolatile memory thin film device by using a neutral particle beam generation apparatus. The present invention solves the problem that substrates such as glass and a plastic film may not be used for manufacturing the memory thin film device due to the high temperature heat treatment process for a long time, in the existing method for manufacturing the thin film device having the nonvolatile memory function by forming the mobile proton layer.