Neutron radiation shielding material, shielding material for semiconductor device, package for semiconductor device, shielding material for nuclear reactor, nuclear reactor containment vessel, nuclear reactor building, shielding material for nuclear fusion reactor, nuclear fusion reactor, and nuclear fusion reactor building
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Solution Overview
Problem
Existing neutron radiation shielding technologies require large amounts of material to achieve sufficient shielding, leading to inefficiencies and potential thickness increases, which can hinder the miniaturization and performance of semiconductor devices.
Innovation Solution
A neutron radiation shielding material comprising a resin-containing layer and a hydrogen boride-containing layer, where the hydrogen boride layer is positioned to directly face the radiation source, effectively attenuating neutron radiation through boron-hydrogen interactions, thereby reducing the need for increased thickness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional neutron radiation shielding materials (epoxy resin with inorganic fillers like gadolinium oxide) are used, then neutron radiation can be shielded, but a large amount of material is required and thickness must be increased to achieve sufficient shielding
Solution Approach 1:
The patent uses a composite material comprising polyethylene resin and boron carbide particles. The polyethylene provides hydrogen atoms for neutron scattering and moderation, while the boron carbide particles provide boron atoms for neutron absorption through the 10B(n,α)7Li reaction. This composite structure achieves superior neutron shielding effectiveness per unit volume compared to conventional epoxy resin with inorganic fillers, directly resolving the contradiction between shielding effectiveness and material quantity required.
Solution Approach 2:
The patent optimizes the particle size distribution of boron carbide particles (specifically controlling the proportion of fine particles with diameter of 10 μm or less) and the hydrogen to boron atom ratio in the composite material. By changing these parameters, the material achieves maximum neutron shielding efficiency, allowing sufficient shielding with reduced material quantity and thickness compared to conventional materials.
2Reliability
If the thickness of shielding material is increased to achieve sufficient neutron radiation shielding, then shielding effectiveness is improved, but the device size and complexity increase
Solution Approach 1:
The polyethylene-boron carbide composite material achieves high neutron shielding effectiveness in a thin layer due to the synergistic effect of hydrogen from polyethylene (for scattering and moderation) and boron from boron carbide (for absorption). This allows sufficient shielding with reduced thickness compared to conventional materials, resolving the contradiction between shielding effectiveness and material thickness.
Solution Approach 2:
By optimizing the particle size distribution of boron carbide (controlling fine particle content) and the hydrogen to boron atom ratio, the patent maximizes neutron shielding efficiency per unit thickness. This parameter optimization enables achieving sufficient shielding effectiveness with minimal thickness, directly addressing the contradiction between shielding performance and thickness.
3Productivity
If semiconductor devices are miniaturized and highly integrated to increase capacity and performance, then device performance is improved, but soft errors from neutron radiation increase
Solution Approach 1:
The patent applies the polyethylene-boron carbide composite shielding material to semiconductor devices. The composite's high neutron shielding efficiency per unit volume allows effective protection of miniaturized, highly integrated devices without adding significant size. The boron carbide particles absorb thermal neutrons through the 10B(n,α)7Li reaction, preventing neutron-induced soft errors while maintaining device miniaturization and high integration, thus resolving the contradiction between device performance and soft error susceptibility.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The shielding material efficiently attenuates neutron radiation across various energy levels, including low energy regions, inhibiting soft errors in semiconductor devices without increasing the material's thickness, while also shielding alpha rays and minimizing secondary radiation generation.
Implementation Method 1
The resin-containing layer or the hydrogen boride-containing layer is disposed on a side where a radiation source of neutron radiation is disposed. The neutron radiation shielding material shields neutron radiation.
Implementation Method 2
a method of using a material for decelerating neutron radiation in a semiconductor device, a method of reducing an area of a semiconductor device through three-dimensional structuring, a method of absorbing generated electric charges by dummy circuits
Data Source
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AI summary
A neutron radiation shielding material includes a resin-containing layer and a hydrogen boride-containing layer. The resin-containing layer or the hydrogen boride-containing layer is disposed on a side where a radiation source of neutron radiation is provided.