Ni-In Internal Electrodes for Reliable High-Capacitance MLCCs
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Solution Overview
Problem
Multilayer ceramic capacitors face challenges in achieving high capacitance and reliability due to internal electrode agglomeration and disconnection, particularly when using finer metal powders, which can lead to reduced capacitance and increased insulation resistance, and require improved connectivity and thickness uniformity to meet the demands of miniaturization and high-temperature applications.
Innovation Solution
Incorporating Ni and In into the internal electrodes, with a specific molar ratio distribution to enhance interfacial bonding and prevent electron movement, and controlling the grain size of dielectric layers to improve capacitance and high-temperature load lifespan while reducing dispersion in capacitance and insulation resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of stationary object
If finer metal powder is used to reduce internal electrode thickness, then capacitance per unit volume increases, but internal electrode agglomeration and breakage occur due to lowered sintering shrinkage initiation temperature
Solution Approach 1:
The patent applies local quality by creating a non-uniform In distribution within the internal electrode: high In concentration (molar ratio ≥0.002) at the interface region (70% or more of points 10nm from interface) to prevent agglomeration, and low In concentration (35% or less of central points) to maintain bulk conductivity. This localized differentiation resolves the contradiction by addressing interfacial stability and bulk connectivity separately.
Solution Approach 2:
The patent changes the chemical composition parameter by adding In to the Ni-based internal electrode material. This parameter change modifies the sintering behavior and interfacial properties, enabling finer metal powder to be used without causing agglomeration, thus increasing capacitance per unit volume while maintaining reliability.
2Strength
If Sn is added to internal electrode paste with high Sn content at dielectric layer interface, then interfacial bonding improves, but capacitance distribution and insulation resistance distribution worsen
Solution Approach 1:
The patent replaces Sn with In in the internal electrode material. While both elements serve similar interfacial bonding functions, In provides superior electrical conductivity and more uniform distribution characteristics, eliminating the capacitance and insulation resistance distribution problems caused by Sn while maintaining interfacial bonding strength.
3Volume of moving object
If internal electrode thickness is reduced to increase stack number, then miniaturization is achieved, but thickness uniformity and connectivity decrease
Solution Approach 1:
The patent changes the material composition parameter by adding In to the internal electrode, which modifies the sintering characteristics and enables better thickness control. This parameter change allows thinner electrodes to be formed with improved uniformity, facilitating miniaturization while maintaining manufacturing precision.
Solution Approach 2:
The patent applies local quality through differentiated In distribution: higher In content at the interface region improves adhesion and prevents breakage in thin electrodes, while controlled bulk composition maintains conductivity. This localized approach enables reduced thickness without sacrificing uniformity or connectivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively improves the reliability and capacitance of multilayer electronic components by suppressing internal electrode agglomeration and disconnection, enhancing high-temperature performance, and maintaining uniformity in capacitance and insulation resistance.
Implementation Method 1
a region with high In concentration, that is, a region in which an average value of a molar ratio of In/(Ni+In) at points 2 nm away from an interface (IF) with the dielectric layer is X, and an average value of a molar ratio of In/(Ni+In) at points 10 nm away from the interface (IF) with the dielectric layer is Y, and X−Y is 0.0041 or more
Data Source
AI summary
A multilayer electronic component includes a body including a plurality of dielectric layers and a plurality of internal electrodes alternately disposed with the plurality of dielectric layers in a first direction, and an external electrode disposed on the body. One of the plurality of internal electrodes includes Ni and In. In the one of the plurality of internal electrodes, among points 10 nm away from an interface with one of the plurality of dielectric layers, a ratio of points at which a molar ratio of In/(Ni+In) is 0.002 or more is 70% or more, and among central points in the first direction, a ratio of points at which the molar ratio of In/(Ni+In) is 0.002 or more is 35% or less.