Ni-P Alloy Sputtering Target Composition Control
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Solution Overview
Problem
Existing Ni—P alloy sputtering targets face challenges in achieving uniform composition and high density due to phosphorus evaporation during atomization, leading to compositional deviations and reduced film quality, while conventional methods require expensive equipment for melting and rolling processes.
Innovation Solution
A method involving the mixing of Ni—P alloy powder with pure Ni powder and subsequent hot pressing and hot isostatic pressing to control phosphorus content and achieve high-density Ni—P and Ni—Pt—P alloy targets with minimal compositional variation, avoiding the need for large-scale melting and rolling equipment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If Ni—P alloy is melted and atomized to produce atomized powder, then the target can be formed, but phosphorus evaporates causing compositional deviation and non-uniform composition
Solution Approach 1:
The alloy is divided into powder particles through atomization, creating discrete segments that can be individually controlled and recombined during sintering, preventing phosphorus evaporation losses that occur in bulk melting
Solution Approach 2:
The atomization and sintering processes are conducted in an inert gas atmosphere (argon or nitrogen), which prevents phosphorus evaporation and oxidation, maintaining compositional uniformity throughout the target
2Volume of stationary object
If hot pressing or hot isostatic pressing is performed on atomized powder with compositional deviation, then the target can be densified, but the composition becomes uneven
Solution Approach 1:
The atomized powder is pre-treated by classification and/or pulverization to ensure uniform particle size distribution and composition before sintering, preventing compositional unevenness during subsequent densification
Solution Approach 2:
The sintering process uses controlled temperature and pressure parameters (hot pressing at 700-900°C and 10-100 atm, or hot isostatic pressing at 700-900°C and 1000-2000 atm) to achieve high density while maintaining compositional uniformity
3Volume of stationary object
If high temperature hot isostatic pressing is performed (e.g., 950°C), then density can be increased, but liquid phase is generated causing brittleness and processing difficulty
Solution Approach 1:
The sintering temperature is optimized to 700-900°C, below the liquid phase formation temperature of the Ni—P alloy, achieving high density through controlled solid-state sintering while maintaining mechanical integrity
Solution Approach 2:
The sintering process utilizes solid-state diffusion and phase transformation mechanisms at controlled temperatures to achieve densification without entering the liquid phase region, avoiding brittleness
4Productivity
If conventional melting and rolling equipment is used, then large-scale production is possible, but the equipment is expensive and complex
Solution Approach 1:
The conventional mechanical melting and rolling process is replaced with a powder metallurgy approach using gas atomization and sintering, which uses thermal and pressure fields instead of mechanical force, simplifying equipment requirements
Solution Approach 2:
The process uses inert gas atmospheres for atomization and sintering, replacing complex vacuum or controlled environment equipment with simpler gas flow systems
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in stable, high-density sputtering targets with minimal phosphorus evaporation, enabling the formation of thin films with favorable properties and reduced particle generation during sputtering, suitable for magnetic recording mediums.
Implementation Method 1
sputtering is a method of depositing a thin film, which has the substance configuring the target material as its basic component, on a substrate facing the target by sputtering grains from the target by the bombarding energy due to Ar ion irradiation toward the target
Implementation Method 2
hot pressing or hot isostatic pressing the obtained atomized powder
Implementation Method 3
hot pressing or hot isostatic pressing the obtained atomized powder
Data Source
AI summary
A method of producing a Ni—P alloy sputtering target, wherein a Ni—P alloy having a P content of 15 to 21 wt % and remainder being Ni and unavoidable impurities is melted and atomized to prepare a Ni—P alloy atomized powder having an average grain size of 100 μm or less, the Ni—P alloy atomized powder is mixed with a pure Ni atomized powder, and the obtained mixed powder is hot pressed. An object of the present invention is to provide a method of producing a Ni—P alloy sputtering target which achieves a small deviation from an intended composition.