Ni-Plated Electrode Structure With Inorganic Edge Adhesion
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Solution Overview
Problem
The low adhesion of organic insulating layers to Ni plating layers results in gaps forming between the Ni plating layer and the electrode, leading to reduced reliability.
Innovation Solution
A semiconductor device design that includes an inorganic insulating layer with high adhesion to Ni, surrounding an organic insulating layer, which exposes the inner peripheral edge of the inorganic layer, ensuring the Ni plating layer covers this edge and reduces gap formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an Ni plating layer is formed on an electrode exposed from an opening of an organic insulating layer, then the Ni plating layer can be formed on the electrode, but the organic insulating layer has low adhesion to Ni causing gap formation that reduces reliability
Solution Approach 1:
An inorganic insulating layer is introduced as an intermediary between the organic insulating layer and the Ni plating layer. The inorganic insulating layer has high adhesion to Ni, serving as a mediator that prevents gap formation. The structure becomes: organic insulating layer → inorganic insulating layer → Ni plating layer, where the inorganic layer acts as the adhesive intermediary.
Solution Approach 2:
The patent uses a composite insulating layer structure combining organic and inorganic materials. The organic insulating layer provides insulation and planarization, while the inorganic insulating layer provides high adhesion to Ni plating. This composite structure leverages the complementary properties of both material types to solve the adhesion problem.
2Device complexity
If the Ni plating layer is formed directly on the organic insulating layer, then the structure is simpler, but connection stability deteriorates due to gap formation
Solution Approach 1:
The inorganic insulating layer serves as a mediator that is thin enough not to significantly increase complexity but provides the necessary adhesion function. It is formed only in the region where Ni plating will be applied, minimizing added structural complexity while ensuring connection stability.
Solution Approach 2:
The inorganic insulating layer is applied locally only where needed - specifically in the region where the Ni plating layer will be formed. This localized application minimizes the impact on overall device complexity while providing the adhesion benefit precisely where required for connection stability.
Data Source
AI summary
A semiconductor device includes a chip, an electrode that is formed on the chip, an inorganic insulating layer that covers the electrode and has a first opening exposing the electrode, an organic insulating layer that covers the inorganic insulating layer, has a second opening surrounding the first opening at an interval from the first opening, and exposes an inner peripheral edge of the inorganic insulating layer in a region between the first opening and the second opening, and an Ni plating layer that covers the electrode inside the first opening and covers the inner peripheral edge of the inorganic insulating layer inside the second opening.