Ni-Ta Sputtering Target Material Microstructure Control
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Solution Overview
Problem
The existing Ni-Ta sputtering target materials face issues with cracking during sputtering and generating particles due to changes in microstructure composition, leading to irregular sputtered films, which are not effectively addressed by using pure Ta powders.
Innovation Solution
A sputtering target material composed of 35% to 50% Ta with the balance being Ni, featuring only Ni2Ta and NiTa compound phases, with a microstructure where each phase has a maximum inscribed circle diameter of not more than 10 μm, enhancing strength without using pure Ta powders.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If pure Ta powders are used to enhance strength, then cracking during sputtering and particle generation are reduced, but composition changes in microstructure occur leading to irregular sputtered films
Solution Approach 1:
The invention changes the compositional parameters by specifying a Ta content range of 35-50 at% and controlling the microstructure to contain only Ni2Ta and NiTa compound phases with maximum inscribed circle diameter of not more than 10 μm. This parameter control achieves both high strength (≥450 MPa) and composition uniformity in sputtered films, resolving the contradiction between strength enhancement and composition stability.
Solution Approach 2:
The invention creates a composite microstructure consisting of two intermetallic compound phases (Ni2Ta and NiTa) in specific proportions, rather than using pure Ta powders mixed with Ni. This composite phase structure provides both the mechanical strength needed to prevent cracking and the compositional uniformity needed for regular sputtered films.
2Strength
If pure Ta powders are used to prevent cracking, then strength is enhanced, but particle generation occurs due to microstructure changes
Solution Approach 1:
By controlling the microstructure parameters to contain only Ni2Ta and NiTa compound phases with fine grain size (maximum inscribed circle diameter ≤10 μm) and Ta content between 35-50 at%, the invention achieves high strength that prevents cracking without generating particles during sputtering.
Solution Approach 2:
The invention replaces pure Ta powders (which cause microstructure instability) with a controlled composite of Ni2Ta and NiTa intermetallic phases. These stable compound phases provide the necessary strength without the harmful microstructure changes that lead to particle generation.
3Ease of manufacture
If conventional Ni-Ta sputtering target materials are used, then ease of manufacture is maintained, but cracking and particle generation occur reducing reliability
Solution Approach 1:
The invention specifies precise compositional parameters (Ta: 35-50 at%, Ni: balance) and microstructural parameters (only Ni2Ta and NiTa phases, maximum inscribed circle diameter ≤10 μm) that can be achieved through conventional sputtering target manufacturing processes, while dramatically improving reliability by eliminating cracking and particle generation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This composition prevents cracking and irregular film composition by ensuring a strong and homogeneous sputtering target material, achieving a bending strength of not less than 450 MPa and suppressing particle generation during sputtering.
Implementation Method 1
a sputtering target material for a soft magnetic thin film layer in a perpendicular magnetic recording medium
Data Source
AI summary
A sputtering target material, wherein the strength of a sputtering target material can be enhanced without using pure Ta to prevent cracking during sputtering and generating particles and to suppress an irregular composition of a sputtered film, is provided. The present invention provides a sputtering target material containing, in at %, 35% to 50% of Ta with the balance being Ni and an inevitable impurity, wherein the sputtering target is composed only of a Ni2Ta compound phase and a NiTa compound phase, and a microstructure in each of the Ni2Ta compound phase and the NiTa compound phase has a maximum inscribed circle diameter of not more than 10 μm.