Nickel Alkoxide Precursor for CVD Vaporization
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Solution Overview
Problem
Conventional nickel compounds used in thin film formation by CVD processes have high melting points and low vapor pressure, making them unsuitable for efficient transfer and vaporization in liquid states.
Innovation Solution
A secondary nickel alkoxide compound with a specific secondary amino alcohol ligand is developed, which has a low melting point and high vapor pressure, allowing it to be in a liquid state at normal temperatures or upon slight heating, facilitating easy transfer and control in CVD processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional nickel compounds are used as precursors in CVD processes, then the compounds are stable and easy to handle, but they have high melting points and low vapor pressure making them difficult to vaporize and transfer efficiently
Solution Approach 1:
The patent changes the chemical parameters of the nickel compound by introducing specific organic ligands (amino alcohol ligands with particular structural features) to modify the physical properties. This transforms the compound from high melting point/low vapor pressure to low melting point/high vapor pressure state, enabling efficient CVD processes while maintaining stability
Solution Approach 2:
The invention creates composite molecular structures by combining nickel centers with specific organic ligands (amino alcohol ligands containing hydroxyl and amine groups). This composite approach allows the molecule to exhibit both stability for handling and high vapor pressure for efficient deposition, resolving the contradiction between ease of manufacture and productivity
2Stability of the object's composition
If conventional nickel compounds with high melting points are used, then the compounds are stable, but they cannot be transferred in liquid state and require high energy for vaporization
Solution Approach 1:
The patent modifies the physical parameters of nickel compounds by introducing specific organic ligands, changing the melting point from high to low and vapor pressure from low to high. This allows the compound to be transferred in liquid state at or near room temperature and vaporized with minimal energy input, while the molecular structure maintains sufficient stability for practical handling
3Reliability
If nickel compounds with low vapor pressure are used, then the compounds are stable and easy to store, but they are difficult to vaporize and control the supplied amount to base material
Solution Approach 1:
The invention changes the vapor pressure parameter of nickel compounds by introducing specific amino alcohol ligands, transforming them from low vapor pressure to high vapor pressure compounds. This enables precise control of the supplied amount to base material through liquid delivery systems while the compounds remain stable for storage, resolving the contradiction between reliability and ease of operation
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compound provides a stable and controlled source material for nickel-containing thin film formation, enabling efficient delivery and precise control of nickel supply during CVD processes, improving the quality and consistency of thin film production.
Implementation Method 1
an alkoxide compound having a specific secondary amino alcohol as a ligand can solve the above problem and thus reached the present invention... having a low melting point and high vapor pressure, allowing it to be in a liquid state at normal temperatures or upon slight heating
Implementation Method 2
being high in vapor pressure and easy to vaporize... can provide good ability to transfer a precursor in the course of producing a nickel-containing thin film by a CVD process
Data Source
AI summary
An alkoxide compound represented by the following formula (I), and a raw material for thin film formation containing the alkoxide compound. In the formula, R1 represents a linear or branched alkyl group having 2 to 4 carbon atoms, and R2 and R3 each represent a linear or branched alkyl group having 1 to 4 carbon atoms. In the formula (I), R1 is preferably an ethyl group. It is also preferred that one or both of R2 and R3 be an ethyl group. The raw material for thin film formation including an alkoxide compound represented by general formula (I) is preferably used as a raw material for chemical vapor deposition.