Nickel-Coated Shower Head for Plasma Etch Selectivity Control
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Solution Overview
Problem
Existing substrate processing technologies using plasma struggle to efficiently control the selectivity ratio between silicon and oxide layers during dry cleaning processes, leading to potential pattern collapse and damage.
Innovation Solution
A substrate processing apparatus and method that utilize a specific configuration of gas supply and coating layers, including a nickel-containing coating layer in the second space, to control the ratio of fluorine free radicals, thereby adjusting the etching amount of the silicon layer and optimizing the selectivity ratio.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If plasma is used for dry cleaning, then cleaning effectiveness is improved, but control over selectivity ratio between silicon and oxide layers deteriorates
Solution Approach 1:
The patent applies local quality by forming a coating layer containing nickel on specific surfaces (shower head and ion blocker) that are in contact with plasma, while leaving other surfaces uncoated. This localized application allows the coating to modify plasma interaction and improve selectivity ratio control without affecting the entire chamber uniformly, thus resolving the contradiction between cleaning effectiveness and selectivity control.
Solution Approach 2:
The patent utilizes parameter changes by varying the composition and thickness of the nickel-containing coating layer to optimize plasma characteristics. By adjusting the coating parameters (material composition, layer thickness), the system can control the selectivity ratio between silicon and oxide layers while maintaining effective cleaning, thus resolving the technical contradiction.
2Productivity
If etching rate of oxide layer is increased, then cleaning efficiency is improved, but damage to silicon layer increases
Solution Approach 1:
The nickel-containing coating layer acts as an intermediary between the plasma and the substrate surfaces. It modifies the plasma interaction to achieve selective etching, allowing efficient oxide layer removal while protecting the silicon layer from excessive damage. The coating mediates the etching process to balance cleaning efficiency with substrate protection.
Solution Approach 2:
The patent converts the potentially harmful effect of plasma on silicon layers into a beneficial selective etching process. By using the nickel-containing coating, the plasma's reactivity is controlled to preferentially etch oxide layers while minimizing silicon layer damage, thus converting a harmful effect into a useful selective cleaning mechanism.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively adjusts the etching selectivity ratio between silicon and oxide layers, minimizing pattern collapse and damage while ensuring precise control over the dry cleaning process.
Implementation Method 1
at least a portion of fluorine free radical generated when the etchant is formed is removed by the first coating layer
Implementation Method 2
providing fluorine-containing gas to the first space to form plasma in the first space
Implementation Method 3
reacting the fluorine radical provided to the second space with the nitrogen and hydrogen-containing gas to form an etchant
Data Source
AI summary
A substrate processing apparatus using plasma capable of efficiently controlling the selectivity ratio of a silicon layer and an oxide layer is provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space under the shower head for processing a substrate; a first supply hole for providing a first gas for generating plasma to the first space; a second supply hole for providing a second gas to be mixed with an effluent of the plasma to the second space; and a first coating layer formed on a first surface of the shower head facing the second space, not formed on a second surface of the shower head facing the processing space, and containing nickel.