Nickel Silicon Oxide Light Blocking Layer for OLED Contrast
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Solution Overview
Problem
Organic light emitting devices suffer from reduced luminance due to outside light reflection by pixel electrodes and metal wiring, which increases manufacturing costs when attempting to address this with expensive polarizers.
Innovation Solution
A display device with a light blocking member composed of nickel and silicon oxide, strategically positioned to block outside light and integrated into the manufacturing process through co-sputtering, along with a semiconductor layer and interlayer insulating layers to enhance luminance and reduce manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a polarizer is added to block outside light reflection, then light leakage is reduced, but light transmission deteriorates and product cost increases
Solution Approach 1:
The harmful function of the pixel electrode (light reflection) is extracted and assigned to a dedicated light blocking member with high reflectivity, allowing the pixel electrode to focus solely on its primary function of light emission and control
Solution Approach 2:
A light blocking member is introduced as an intermediary layer between the pixel electrode and the external environment, absorbing or reflecting outside light before it reaches the pixel electrode, thereby preventing light leakage without affecting the organic light emitting device's light output
2Object-affected harmful factors
If a polarizer is added to block outside light reflection, then light leakage is reduced, but product cost increases
Solution Approach 1:
The light blocking member is formed using conventional thin film deposition techniques (sputtering or evaporation) with readily available materials (Al, Ti, Ta, Mo, W, or their alloys), replacing the expensive polarizer and simplifying the manufacturing process
Solution Approach 2:
The light blocking member is integrated into the existing thin film transistor structure and can be formed using the same deposition equipment and processes already used for other functional layers, making it applicable to standard OLED manufacturing lines without requiring additional specialized equipment
3Illumination intensity
If a light blocking member is added to improve luminance, then light leakage is reduced, but device complexity increases
Solution Approach 1:
The light blocking member is merged with the thin film transistor structure, forming an integrated device where the light blocking function is combined with the existing electrical control and light emission functions, rather than adding a separate standalone component
Solution Approach 2:
The light blocking member is segmented into specific regions corresponding to the pixel electrode areas, with light blocking layers positioned only where needed to prevent light leakage from metal wiring and pixel electrodes, rather than covering the entire device area
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of a nickel and silicon oxide light blocking member effectively reduces light leakage, improving luminance and image quality while lowering production costs by preventing outside light reflection and internal light leakage.
Implementation Method 1
as outside light is reflected by the pixel electrodes and metal wiring, it leaks out of the device
Implementation Method 2
The light blocking member contains nickel and silicon oxide... effectively reduces light leakage
Implementation Method 3
forming a light blocking member on a substrate by co-sputtering nickel and silicon oxide
Data Source
AI summary
A display device that requires less manufacturing time is presented. The display device includes a light blocking member formed on a substrate, a semiconductor layer formed on the light blocking member, and a gate insulating layer formed on the semiconductor layer. Gate conductors, a first interlayer insulating layer, data conductors, a second interlayer insulating layer, and a pixel electrode are formed. A third interlayer insulating layer is deposited with an opening that extends to the pixel electrode. An organic light emitting member is formed in the opening, and a common electrode is formed. The light blocking member contains nickel and silicon oxide. The presence of nickel-and-silicon-oxide light blocking member below the semiconductor improves the crystallizing speed for the semiconductor layer, reducing the overall manufacturing time. Further, the light blocking member is disposed under the pixel electrodes to prevent light leakage, improving the contrast ratio and image quality.