Nickel Substrate Thin Film Capacitor Impurity Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Thin film capacitors exhibit low capacity and high leak current when manufacturing conditions, such as increased annealing temperature or time, are altered, which affects the dielectric constant and insulation resistance.
Innovation Solution
A thin film capacitor is manufactured using a nickel substrate with a purity of 99.99% or above, where impurities like iron, titanium, and copper are diffused in controlled amounts to the dielectric layer during annealing, maintaining high capacity and low leak current, and the capacitor is designed with a dielectric layer thickness of 0.05 μm to 5 μm to prevent short circuits and stress-related cracks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If annealing temperature is raised or annealing time is extended to increase the dielectric constant, then the relative dielectric constant is improved, but the leak current increases and capacity decreases
Solution Approach 1:
The patent changes the chemical composition parameters of the nickel substrate by strictly controlling impurity content (Fe, Ti, Cu, Al, Mg, Mn, Si, Cr each at 65 ppm or below). This parameter change in substrate purity prevents excessive impurity diffusion during annealing, allowing the dielectric constant to be enhanced while maintaining low leak current and high capacity.
2Area of stationary object
If annealing temperature is raised or annealing time is extended to increase the dielectric constant, then the relative dielectric constant is improved, but the capacity decreases
Solution Approach 1:
The patent changes the chemical composition parameters of the nickel substrate by strictly controlling impurity content (Fe, Ti, Cu, Al, Mg, Mn, Si, Cr each at 65 ppm or below). This parameter change in substrate purity prevents excessive impurity diffusion during annealing, allowing the dielectric constant to be enhanced while maintaining high capacity.
3Area of stationary object
If high temperature annealing is performed to enhance the relative dielectric constant, then the dielectric constant is improved, but impurity diffusion increases affecting dielectric layer properties
Solution Approach 1:
The patent performs preliminary action by strictly controlling the impurity content in the nickel substrate before the annealing process. By pre-establishing low impurity levels (each impurity at 65 ppm or below), the substrate is prepared in advance to minimize impurity diffusion during subsequent high-temperature annealing, thereby maintaining manufacturing precision.
Solution Approach 2:
The patent changes the chemical composition parameters of the nickel substrate by strictly controlling impurity content (Fe, Ti, Cu, Al, Mg, Mn, Si, Cr each at 65 ppm or below). This parameter change in substrate purity prevents excessive impurity diffusion during annealing, allowing the dielectric constant to be enhanced while maintaining low leak current and high capacity.
4Length of moving object
If the dielectric layer thickness is reduced to achieve thin-shaped capacitor, then the thin film shape is improved, but the risk of short circuit and crack formation increases
Solution Approach 1:
The patent changes the purity parameter of the nickel substrate to 99.99% or higher, which fundamentally alters the diffusion behavior during annealing. This parameter change ensures that even with thin dielectric layer thickness (0.05-5 μm), the low impurity content prevents degradation that would lead to short circuits or cracks, thereby maintaining reliability.
5Length of moving object
If the dielectric layer thickness is reduced to achieve thin-shaped capacitor, then the thin film shape is improved, but the risk of crack formation due to stress increases
Solution Approach 1:
The patent changes the purity parameter of the nickel substrate to 99.99% or higher, which fundamentally alters the diffusion behavior during annealing. This parameter change ensures that even with thin dielectric layer thickness (0.05-5 μm), the low impurity content prevents degradation that would lead to short circuits or cracks, thereby maintaining reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in a thin film capacitor with high capacity and low leak current, maintaining the dielectric layer's properties and preventing capacity reduction and crack formation, allowing for effective EMI control in LSI applications.
Implementation Method 1
the precursor dielectric layer is annealed to produce the thin film capacitor
Implementation Method 2
the precursor dielectric layer is annealed so that the precursor dielectric layer is crystallized to be the dielectric layer
Implementation Method 3
when one or more impurities (for example, at least one selected from the group consisting of iron, titanium, copper, aluminum, magnesium, manganese, silicon and chromium) included in the nickel substrate are diffused from the nickel substrate to the precursor dielectric layer during annealing
Data Source
AI summary
A thin film capacitor with high capacity and low leak current is provided. The thin film capacitor includes a nickel substrate with nickel (Ni) purity of 99.99 weight percent or above, and a dielectric layer and an electrode layer disposed in this order on the nickel substrate. The thin film capacitor is typically manufactured as follows. A precursor dielectric layer is formed on a nickel substrate with nickel purity of 99.99 weight percent or above, and is subjected to annealing to form a dielectric layer. The diffusion of impurities from the nickel substrate to the precursor dielectric layer during annealing is suppressed.